03NOV08 Search Results

si4162

Abstract: SI4162D
Contextual Info: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

si4168

Abstract: 69005
Contextual Info: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

82643

Abstract: HP4192A JESD78 marking C_X marking CX
Contextual Info: DG2737, DG2738, DG2739 Vishay Siliconix 6-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2737, DG2738 and DG2739 are high performance, low on-resistance analog switches of dual SPST configuration. • • • • • • • Built on Vishay Siliconix's sub-micro CMOS technology, the

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: –25 °C UP TO 85 °C

Contextual Info: New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.045 at VGS = - 10 V - 5.8 0.062 at VGS = - 4.5 V

Contextual Info: Si4230DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0205 at VGS = 10 V 8 0.026 at VGS = 4.5 V 8 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 7.3 APPLICATIONS

74285

Abstract: SC-89 SI1073X
Contextual Info: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

MARKING SO

Contextual Info: SiR436DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 40 0.0062 at VGS = 4.5 V 40 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Contextual Info: New Product Si7114ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 35 0.0098 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested

Contextual Info: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested

69005

Contextual Info: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

VLMW2100

Contextual Info: VLMW21. Vishay Semiconductors Standard Mini SMD LED FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • IR reflow soldering • Available in 8 mm tape

VO3063

Abstract: 932 optocoupler smd transistor zc VO3062 VO3062-X006 VO3062-X007T VO3063-X006 VO3063-X007T Phototriac zero voltage crossing
Contextual Info: VO3062, VO3063 Vishay Semiconductors Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V FEATURES A 1 6 MT2 C 2 5 NC NC 3 i179030 ZCC* 4 MT1 *Zero crossing circuit • • • • • • • • 1500 V/µs dV/dt minimum 600 V blocking voltage 100 mA on-state current

Si5419DU

Abstract: 82608 S-82608
Contextual Info: SPICE Device Model Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: LCD-122H032A, LCD-122H032C Vishay 122 x 32 Graphic LCD FEATURES • Type: Graphic • Display format: 122 x 32 dots • Built-in controller: Epson SED1520 or equivalent • Duty cycle: 1/32 • Available for internal (A type), external (C type), oscillation 2 kHz

Contextual Info: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch

RS92n

Contextual Info: RS92N, RS92N A , A N High-Precision Foil Resistor – CECC-Qualified features • Temperature coefficient of resistance TCR : ± 2 ppm/ºC (- 55 ºC to + 155 ºC, + 20 ºC ref.) • Resistance range: 80.6 Ω to 120 kΩ • Vishay Foil Resistors are not restricted to standard values; specific “as required”

Contextual Info: New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.045 at VGS = - 10 V - 5.8 0.062 at VGS = - 4.5 V

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 ID (A)a RDS(on) (Ω) 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

Contextual Info: DG2018, DG2019 Vishay Siliconix Low Voltage, Dual DPDT and Quad SPDT Analog Switches DESCRIPTION FEATURES The DG2018 and DG2019 are low voltage, single supply analog switches. The DG2018 is a dual double-pole/doublethrow DPDT with two control inputs that each controls a

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL

Si4838BDY

Abstract: 68964
Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

Si7114ADN

Abstract: Si7114ADN-T1-GE3
Contextual Info: New Product Si7114ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 35 0.0098 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested