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Catalog Datasheet	Type	Document Tags	PDF
BUK9006-55A Abstract: 03nn86 11571 Contextual Info: BUK9006-55A TrenchMOS logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive GPA TrenchMOS™ technology.	Original	BUK9006-55A BUK9006-55A 03nn86 11571	PDF

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BUK9006-55A

Abstract: 03nn86 11571
Contextual Info: BUK9006-55A TrenchMOS logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive GPA TrenchMOS™ technology.

Original

BUK9006-55A BUK9006-55A 03nn86 11571

PDF