03NC65 Search Results

03nc60

Abstract: BUK7222-55A
Contextual Info: BUK7222-55A TrenchMOS standard level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7222-55A

Abstract: 03nc60
Contextual Info: DP AK BUK7222-55A N-channel TrenchMOS standard level FET Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK7620-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: PHP54N06T N-channel enhancement mode field-effect transistor Rev. 01 — 14 February 2001 Product specification M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BUK7720-55A TrenchMOS standard level FET Rev. 01 — 19 Feb 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: DP AK BUK7222-55A N-channel TrenchMOS standard level FET Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7520-55A

Contextual Info: BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7620-55A

Contextual Info: BUK7620-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7720-55A

Abstract: 03nc65 03nc60
Contextual Info: BUK7720-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK7520-55A; BUK7620-55A TrenchMOS standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHP54N06T

Abstract: 03nc60
Contextual Info: PHP54N06T N-channel TrenchMOS standard level FET Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in