03MAR20 Search Results

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT 2 3 RIGHTS - - DIST LOC RESERVED. 00 EH BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S LTR F D E SC RIPTIO N DATE DWN 03MAR2006 REV PER ECO— 0 6 — 0 0 5 0 0 4 APVD LHS c c

Contextual Info: . RIGHTS RESERVED R E V IS IO N S LTR DESCRIPTION DATE LOGO CHANGE DWN 03MAR2013 TY APVD KZ MATERIALS: -HOUSING: HIGH TEMPERATURE NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm THICK, BRASS PREP LATED WITH 0.76um MIN S E M I -B RIGH T NICKEL; POST-DIPPED W I T H 2 um M I N S A C 3 0 5 A L L O Y L E A D F R E E S O L D E R

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA MECHANICAL: DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 — 03M A R 2005 LV DF/CG - S H I E L D - .010" T H I C K , C 2 6 8 0 0 B R A S S P R E P L A T E D W I T H 3 0 j i INCH MI N S E M I - B R I G H T

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

proner comatel

Abstract: PRONER comatel SAC300
Contextual Info: 2 6 THIS M DRAWING IS U N P U 8 1 1S H E 0. BY C O PY RI G HT 2004 RELEASED TYCO ELECTRON I C S CORPORATION. AL L toc 2004 FOR P U 0 L ICA TION DIST REV I S IONS 00 R [ GHTS R E S E R V E D . LTR O D a t e u r Annue I - M e n s u e FIRST M O N T A GE DE C O N T R O L E

Contextual Info: SM10200C Voltage 200V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SMC FEATURES RoHS Compliant Product Low forward voltage drop High current capability High reliability

mag45

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 REV PER EC 0 S 1 3 - 0 6 4 4 - 0 4 DATE DWN APVD 03M A R 2005 LV DF MAX

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

ISO7637

Abstract: VND830SP VND830SP13TR
Contextual Info: VND830SP Double channel high-side driver Features Type RDS on IOUT VCC VND830SP 60mΩ(1) 6A(1) 36V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

IFM NV 0200

Contextual Info: ESDALC6V1-5T6 Low capacitance Transil arrays for ESD protection Features • 5 unidirectional Transil diodes ■ Breakdown voltage VBR = 6.1 V min. ■ Low diode capacitance: 7 pF typ. ■ Low leakage current < 100 nA ■ Very small PCB area: 1.0 mm² ■

Contextual Info: ESDA6V1-5T6 Transil arrays for ESD protection Features • 5 unidirectional Transil diodes ■ Breakdown voltage V br = 6.1 V min. ■ Low leakage current < 200 nA ■ Very small PCB area: 1.0 mm2 ■ 350 ^m pitch micro-package ■ Lead-free and RoHS package

linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A

Abstract: st1s
Contextual Info: ST1S03 1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 AND SO-8 • ■ ■ ■ ■ ■ ■ ■ ■ STEP-DOWN CURRENT MODE PWM 1.5MHz DC-DC CONVERTER 2% DC OUTPUT VOLTAGE TOLERANCE INTERNAL SOFT START FOR START-UP CURRENT LIMITIATION AND POWER ON

F8NK85Z

Abstract: P8NK85Z F8NK85 STP8NK85Z F8NK8 p8nk
Contextual Info: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A 150 W

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

Contextual Info: STEVAL-ISA046V1 2 A / 1.2 V high-efficiency synchronous buck converter evaluation board based on the ST1S09 with inhibit Data Brief Features • Input voltage range: 2.7 V to 5.5 V ■ Output voltage: 1.2 V ■ Max Iout: 2 A ■ High internal switching frequency: 1.5 MHz

Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

L6393

Abstract: AN2785 MDT-400 L6393D L6393D013TR logic port and igbt capacitor charge pump
Contextual Info: L6393 Half-bridge gate driver Features • High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink 3/  ■ Switching times 75/35 nsec rise/fall with 1 nF load

Contextual Info: L6374 Industrial quad line driver Features • Four independent line drivers with 100 mA up to 35 V outputs ■ Input signals between - 7 V and + 35 V, with pre-setting threshold ■ Push-pull outputs with three state control and true zero current between Vs and ground

Contextual Info: VND830MSP Double channel high-side driver Features Type RDS on IOUT VCC VND830MSP 60 mΩ(1) 6 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

M48Z35

Abstract: M48Z35Y SOH28 PCDIP28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:

Contextual Info: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

M28R400C

Abstract: M28R400CB M28R400CT
Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)

Contextual Info: STL25N15F3 N-channel 150 V, 0.045 Ω, 6 A PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STL25N15F3 150 V < 0.057 Ω 6 A (1) ) s ( ct 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

36-05-019

Contextual Info: 8 T H I S DR AWI NG I S U N P U B L I S H E D . D IF F U SIO N RE STREIN TE AMP ßL C O P Y R I G HT 2009 BY R E L E A S E D FOR P U B L I C A T I O N LIBRE A LA D IFF U SIO N TYCO ELECTRONICS CORPORATION. 2009 F TOUS DRO|HT S S R E SER VE SV EC >' coupe D-D