03JAN02 Search Results

88142

Contextual Info: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

V2000

Contextual Info: 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 FOR RELEASED BY AMP PUBLICATION ALL IN COR POR ATE D. R IG H T S 2 ,19 LOC R ES ER V ED . AF 4 . 67[ . 1 84] 7 . 37 . 684] 50 DESCRIPTION L TR CIRCUIT U L _L PER 0G3A-0682-01 DATE DWN APVD

Contextual Info: BAT54WS Vishay Semiconductor New Product Schottky Diode Mounting Pad Layout SOD-323 0.055 1.40 0.062 (1.60) 0.047 (1.20) .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Features .006 (0.15) max. .043 (1.1) .004 (0.1) max.

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBU CATION LOC R E V IS IO N S AJ ALL RIGHTS RESERVED. COPYRIGHT DIST BY TYCO ELECTRONICS CORPORATION. p LTR c DESCRIPTION REV PER DATE 0S14 -0 4 6 9 -0 3 OWN APVD KW KW 2 0 NOVO3 D D C [.05] 1408313 1.1 B B DEBURR OR CHAMFER EDGE

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 REVISIONS ALL RIGHTS RESERVED. - 20 2 3 P LTR DESCRIPTION F D 776437-2 SCALE 776437-3 2:1 SCALE 776437-4 2:1 SCALE DATE REVISED PER ECO-13-019231 DWN DR 09DEC2013 1 MATERIAL: 15% GLASS FILLED THERMOPLASTIC

pbt-GF15

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR ALL C O P Y R I G H T 20 PUBLICATION RIGHTS LOC RESERVED. R E V I S I ONS DIST GE DESCRIPTION E I P 1= PBT-GF15<^ ZI JV DWN 0 6 APR201 I R E V I S E D R E R E C O - I 1- 0 0 52 9 4 RK IZ M A T E R IA L : I 5 COLOR: BLACK

A109

Contextual Info: IN THIRD ANGL E PROJECTION RELEASED C COPYRIGHT R E S E R V E D. AMP 1972 PRODUCTS AMP BY MAY BE FOR P U B L I C A T I O N I N G O R P O R A T E D , HARR I S B O R G , P A . COVERED BY U.S. AND BORE I GN DECEMBER ALL 29, INTERNATIONAL PATENTS AND/OR 1983

ic 747

Abstract: wy 747
Contextual Info: DRAWING MADE IN THIRD ANGLE RELEASED C C O P Y R I G H T RESERVED. 19 8 3 AMP PRODUCTS BY MAY AMP BE FOR BY U„5„ MAY 6 , PUBLICATION INCORPORATED, HARRISBURG, PA. COVERED 6 7 PROJECTION AND FOREIGN ALL INTERNATIONAL PATENT5 ANDYOR 5 1983 RIGHTS PATENT5

A109

Abstract: P005
Contextual Info: 4 DRAWI NG MADE THIS IN THIRD DRAWI NG ANGL E 15 3 PROJECTION UNPUBL I SHED COPYRIGHT RELEASED 19 BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL 19 RIGHTS RESERVED. D 1 12 4 9 4 ± „015. 329 C GROUND I NG I N D E N T 5 CFOR - 3 , - 4 , - 7 S - 8

A108

Abstract: A109 B633 MIL-T-10727
Contextual Info: 7 DRAWING THIS MADE IN THIRD DRAWING ANGLE 15 UNPUBLI5HED COPYRIGHT 6 5 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL <3> 4 3 2 RIGHTS DI ST LOC 19 GP RESERVED. REV I 5 I0N 5 00 LTR ZONE D E S C R I R T I ON D REDRAW S 0 B 5

surge diode marking code d6

Abstract: BAT54WS
Contextual Info: BAT54WS Vishay Semiconductor New Product Schottky Diode Mounting Pad Layout SOD-323 0.055 1.40 0.062 (1.60) 0.047 (1.20) .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Features .006 (0.15) max. .043 (1.1) .004 (0.1) max.

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 - REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION C2 D DATE DWN APVD REVISED PER ECO-11-005030 12MAR2011 RK HMR REVISED PER ECO-13-019168 05DEC2013 DR RB D D 776434-2 SCALE

Contextual Info: IMC-0805-01 Vishay Dale Inductors High Frequency, Surface Mount FEATURES • High self-resonant frequency values. • High Q values at higher frequencies. • Wirewound construction. • Tape and reel packaging for automatic handling, 2000/reel. • Compatible with vapor phase and infrared reflow soldering.

Contextual Info: ZM4728 thru ZM4764 Vishay Semiconductor Zener Diodes VZ Range 3.3 to 100V Power Dissipation 1W Glass MELF Mounting Pad Layout 0.157 4.00 MAX Cathode Mark 0.102 (2.6) 0.094 (2.4) 0.049 (1.25) MIN 0.118 (3.00) MIN 0.022 (0.55) 0.205 (5.2) 0.189 (4.8) 0.256 (6.50)

1U j 6

Contextual Info: 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 FOR RELEASED BY AMP PUBLICATION ALL IN COR POR ATE D. R IG H T S 2 ,19 LOC R ES ER V ED . AF 4 . 67[ . 1 84] 1 7 . 37 [ .684] 50 DESCRIPTION L TR t M CIRCUIT UL_L : revisio n REV I D D IS T

1N4728

Abstract: 1N4764 ZM4728 ZM4729 ZM4730 ZM4731 ZM4732 ZM4733 ZM4764
Contextual Info: ZM4728 thru ZM4764 Vishay Semiconductor Zener Diodes VZ Range 3.3 to 100V Power Dissipation 1W Glass MELF Mounting Pad Layout 0.157 4.00 MAX Cathode Mark 0.102 (2.6) 0.094 (2.4) 0.049 (1.25) MIN 0.118 (3.00) MIN 0.022 (0.55) 0.205 (5.2) 0.189 (4.8) 0.256 (6.50)

A109

Abstract: MIL-C-50
Contextual Info: 4 DRAWING MA D E THIS IN THIRD DRAWING T ANGLE IS 3 UNPUBLISHED. COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL 2 <3> PROJECTION L OC , 19 RIGHTS DI 5 T D CONNECTOR MATES AHPLIHITE SERIES 108-40,005 FLANE R E V I 5 I ON' 00

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR E1 F DESCRIPTION DATE DWN APVD REVISED PER EC0-11-005030 26APR2011 RK HMR REVISED PER ECO-13-019168 05DEC2013 DR RB D D 776433-2 SCALE: 2:1

BAT54 E9

Abstract: marking l4 sot-23 BAT54 BAT54A BAT54C BAT54S
Contextual Info: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as

BD313

Abstract: S0845
Contextual Info: IN THIRD ANGLE PROJECTION RELEASED C C O P Y R I G H T RESERVED. AMP 19 7 2 BY PRODUCTS MAY AMP BE FOR PUBLICATION I N G O R P O R A T E D , HARR I S B O R G , P A . COVERED BY U.S. AND BORE IGN DECEMBER ALL 2 3, INTERNATIONAL PATENTS A ND/ O R 1 983 P F

Contextual Info: DR A WI NG THIS P MADE D RAWING COPYRIGHT THIRD ANGLE UNPUBLISHED 19 AMP RESERVED. IN 15 PRODUCTS MAY BE PROJECTION RELEASED AMP BY 3 FOR PUBLICATION I N C O R P O R A T E D , HARR I S B U R G , P A . COVERED BY U .S . MOD 2 AND BORE IGN D I ST GP 00 REV I 5 I0N 5

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 - REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION C1 D DATE DWN APVD REVISED PER ECO-11-005294 20APR2011 RK HMR REVISED PER ECO-13-019231 09DEC2013 DR RB D D 776438-2 SCALE