03JA Search Results

OS-14

Abstract: QQ-S-365 os14
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ R E V IS IO N S DIST 16 LTR DESCRIPTION G REVISED PER EC OS14 - 0 4 4 9 - 0 4 DATE DWN APVD 03JAN 05 BM JL D BRASS TIN -A DIA

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST R E VIS IO N S 16 LTR DESCRIPTION AU .5 1 6 REF .531 2 16 .328 APVD 03JA N 05 BM JL .3 1 2 I .572 DWN REF D V IE W

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DESCRIPTION B' CONTAC REV PER EC O —0 7 —0 0 0 1 5 0 DATE DWN APVD 03JAN2007 BC GG CONTACT LAYOU

03JA

Abstract: JPN 03ja
Contextual Info: •使用方法 03JA 検出回転方向 ＋ センサ DCカット AMP A／D 処理回路 JPN 883 1. １個のセンサで１回転軸方向を検出します。 2. 高精度な測定を行うには周囲温度の変化による静止時出力の変動（温度ドリフト）の影響を除去するために、低周波の

Contextual Info: 4 T H 1S DRAW 1NG 1S UNPUBLI SHED. COPYRI GHT 20 3 RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS CORPORAT 1ON. ALL RI GHT S 2 20 LOC 00 GP RESERVED. REV 1S 1ONS DI S T p LT R DESCR1PTI ON A A1 1 0 . 0 DATE DWN APVD RELEASED PER ECO- 0 5 - 015 609 03JAN2006

JPN 03ja

Abstract: 03JA
Contextual Info: !APPLICATION Direction of rotation to be detected. 03JA Sensor DC cut AMP A/D Converter Processing circuit JPN 883 1. One sensot per axis of rotation to be detected. 2. For high-precision measurements, the effect of tempreature drift fluctuation of output in stationary state due to changes in ambient

A4840

Contextual Info: 6 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 5 4 3 2 PU B LIC ATIO N RIG HTS LOC REVISIONS D IS T AD 00 R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. I.C LTR D E S C R IP T IO N DATE DWN A ECO—05 —01 3690 03JAN 05 A1

25X0

Contextual Info: THIS DRAWING IS UNPU BLISH ED. RELEASED FOR PUBLICATION LOC COPYRIGHT - DIST CE 16 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR K DESCRIPTION DWN DATE REVISED PER 0 A 4 0 - 0 6 3 4 - 0 4 APVD JWD JD 03JAN05 D 0.1 5 1 0 . 0 3 [ 6 ± 1 ]

Contextual Info: THIS DRAWING IS UNPUBLISHED. AA ^0 COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. D IS T R E V IS IO N S 00 GP P LTR H1 DESCRIPTION DATE 03JAN06 REVISED PER E C O - 0 6 - 0 1 5 2 7 8 DWN APVD

CAN43111

Abstract: ANCV spbt2532c2.at 0307-ARAJ00079 SPBT2532C2 bluetooth SPBT2532C2 SPBT2532 2450T18A100S B016360 YAGEO
Contextual Info: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5

Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested

Contextual Info: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019

Contextual Info: SQM85N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085 ID (A)

Contextual Info: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

sum75n06

Contextual Info: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT

m955

Abstract: M9551 M95512-DF
Contextual Info: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width

1833C

Abstract: 308010 793DX 104L 293D 293D335X016A2 D/CRCW-IF e3 D/CRCW-HR e3
Contextual Info: 293D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Commercial, Surface Mount FEATURES • Terminations: 100 % Tin, standard SnPb available PERFORMANCE/ELECTRICAL CHARACTERISTICS Operating Temperature: - 55 °C to + 85 °C to + 125 °C with voltage derating

Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

Contextual Info: SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 75 RDS(on) () at VGS = 10 V 0.0048 ID (A) • TrenchFET Power MOSFET 120

AN1995

Abstract: M25P40
Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)

of heat sink

Contextual Info: Package Information Vishay Siliconix TO-263 D2PAK : 3-LEAD INCHES -B- L2 -A- c2 D2 D3 A E E1 K D D1 E3 6 L c* L3 c1 A A b2 b e c Detail “A” E2 c c1 L1 b b1 M 0° L4 -5 ° 0.010 M A M 2 PL MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508

Contextual Info: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance