03FFFH Search Results

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Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

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Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

A29L008

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:

MSM66587

Abstract: P8P10 Q587 MSM66P587 MSM66Q587 TQFP100-P-1414-0 M66P587 P587 TXC1 P12SF
Contextual Info: E2E1033 -27-Y6 Pr el im This version: Jan. 1998 MSM66585/586/587/P587/Q587 ina ry Previous version: Nov. 1996 ¡ Semiconductor MSM66585/586/587/P587/Q587 ¡ Semiconductor Built-in 16 bit PWM and 8 bit A/D Converter, High-speed High-preformance 16 bit Microcontroller

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

amic a290021t-70

Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Contextual Info: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/

amd 29F400AB

Abstract: 29F400AT 29F400AB
Contextual Info: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors

Contextual Info: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

AMIC A29001

Abstract: plcc 32pin A290011UV-70U
Contextual Info: A29001/290011 Series 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue October 19, 2000 0.1 Change ILIT from 50 A to 100μA

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

Contextual Info: o M F O T E M in ] « ] A28F200BR-T/B 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time,

Contextual Info: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time

Contextual Info: ¡ p f ô n y iM * ? M80186 HIGH INTEGRATION 16-BIT MICROPROCESSOR Military • Direct Addressing Capability to 1 MByte of Memory a Completely Object Code Compatible ■ Integrated Feature Set — Enhanced M8086-2 CPU — Clock Generator — 2 Independent, High-Speed DMA