03FEB04 Search Results

Contextual Info: ISS. DATE E.C.N. DESCRIPTION 1 02-May-12 FIRST ISSUE 2 11-Feb-04 2/4/1133 EDGE DRAFT INCREASED TO 3° 3 15-Jan-07 SCALLOP SIZE INCREASED TO R3.75 4 19-May-11 05/11/1301 1/07/1199 CUSTOMER DRAWING TIR CURVE DEFINITION REPLACED WITH EQUATION REFINE 25 DIM. TO REF

Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

zener Z2 033

Abstract: VISHAY TZS4678
Contextual Info: TZS4678 to TZS4717 VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener-Diodes Features • • • • Zener voltage specified at 50 µA Maximum delta VZ given from 10 µA to 100 µA Very high stability Low noise Applications 9612009 Voltage stabilization

S4 DIODE schottky Vishay

Abstract: marking code s4 diode VISHAY marking s4 VISHAY sod
Contextual Info: SD104AWS to SD104CWS VISHAY Vishay Semiconductors Schottky Diodes Features • • • • • • • • Low turn-on voltage Low capacitance Ultrafast switching Single, double, and ring balanced mixer in narrowband receivers up to 1 GHz. Microminiature plastic package

18546

Contextual Info: BAT46 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

mod 8 ring counter using JK flip flop

Abstract: ALU 74-181 auxillary contacts circuit datasheet ALU 74-181 mod 4 ring counter using JK flip flop UPSD3212C-40U6 UPSD3212CV UPSD3212CV-24T6 UPSD3212CV-24U6 LQFP80
Contextual Info: UPSD3212A UPSD3212C, UPSD3212CV Flash programmable system devices with 8032 MCU and USB and programmable logic Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management

KX23

Abstract: EX39
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2004 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. APRIL ,2004- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: DESCRIPTION A 1\ SINGLE PACK IN ACCORDANCE WITH SPEC DATE EBDO—0 0 3 5 —03 APVD

74684

Abstract: 4052 application
Contextual Info: 4 TH IS DRAWING COPYRIGHT IS 2 U N P U B L IS H E D . 1 987 RELEASED BY ^ C O ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS DEC REVISIONS 1987. R E S ER V ED . LTR ;1 D 48,68,96 Pos <ñ> <ñ> <ñ> <ñ> <8> <S> <S> <ñ> DATE REVISED PER ECO-10 - 0 0 0 4 4 3

Contextual Info: CAT28LV256 256K-Bit CMOS PARALLEL EEPROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 200/250/300 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:

KX3b

Contextual Info: T H IS D R A W IN G IS REUEASED U N P U B L IS H E D . FO R AUU C O P Y R IG H T 2004 By P U B U IC A T IO N R IG H TS A P R IU ,2 0 0 4 - REVISIO N S RESERVED. E - LTR NOTES: A1 4 \ S IN G LE A jO O A , D E S C R IP T IO N PACK TRAY 0 .0 8 p m PACK Au

742 IC

Contextual Info: 2 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 1 988 RELEASED BY ^ C O FOR ALL ELECTRONICS CORPORATION. PUBLICATION RIGHTS MAR 1988- REVISIO N S R E S ER V ED . LTR RE VISED Ttv^ h D PER D E S C R IP TIO N DATE DWN ECO-09-024717 29DEC09 APVD KK AEG

58AP

Abstract: upsd TQFP52 TQFP80 uPSD3200 uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6
Contextual Info: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM FEATURES SUMMARY • The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD321X Devices of Flash PSDs feature dual banks of Flash memory, SRAM,

Contextual Info: 6 T H I S DRAWI NG COPYRI GHT I S UNP UB L I S HE D. 19 3 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC DIST 39 CONN CONN A1 REVISIONS A L L R I GH T S R ES ERVED. CONN CONN A8 A 1 O O o O o O o O o o o A3 • o i o * 8 o o o O o o

Contextual Info: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16 Kbit SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller

melf diode 666

Contextual Info: TZMB. VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener-Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise VZ-tolerance ± 2 % 17205 Applications Voltage stabilization Mechanical Data

TQFP80

Abstract: uPSD3212A uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6 uPSD3212CV-24U6 uPSD32
Contextual Info: uPSD3212A, uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY

quality acceptance plan

Abstract: Vishay
Contextual Info: VISHAY Vishay Semiconductors Quality Information Vishay Semiconductors’ Continuous Improvement Activities • Quality training for ALL personnel including production, development, marketing and sales departments • Zero defect mindset • Permanent quality improvement process

Contextual Info: CAT28LV256 256K-Bit CMOS PARALLEL EEPROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 200/250/300 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2004 APRIL ,2004- LOC ALL RIGHTS RESERVED. DIST E R E V IS IO N S B LTR NOTES: A 1\ SINGLE PACK £ \ j0 0 DESCRIPTION IN ACCORDANCE WITH SPEC TRAY PACK DATE EBDO—0 0 3 5 —03

Contextual Info: SD0520LS VISHAY Vishay Semiconductors Dual Shottky Diode 3 Features • Low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications 1 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg Packaging Codes/Options:

Contextual Info: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic

iso 9002 incoming part inspection

Abstract: Vishay Semiconductors
Contextual Info: VISHAY Vishay Semiconductors Quality Information Vishay Semiconductors’ Continuous Improvement Activities • Quality training for ALL personnel including production, development, marketing and sales departments • Zero defect mindset • Permanent quality improvement process

11 TI APD

Contextual Info: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16 Kbit SRAM FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY

zener smd marking M1 sod-123

Abstract: WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book zener diodes and esd protection components vishay semiconductors vHN-db1103-0406 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents