03DEC2002 Search Results

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

MLP8 2x3mm

Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Contextual Info: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

IEC61360-4

Abstract: EIA-724
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W160ET

Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY  SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read  ACCESS TIMES: 70, 90ns  PROGRAMMING TIME – 10µs per Byte/Word typical  35 MEMORY BLOCKS

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D n 21 .OS ;.B30] B A AMP 1 4 7 1 -9 REV 31MAR2000 LOC DIST AF 50 REVISIONS LTR DESCRIPTION REV & A A OWN DATE REL PER 0 G 3 A - 0 0 5 3 - 0 3

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS

M29W160EB

Abstract: M29W160E M29W160ET TFBGA48 2aa 555
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS

Capella Microsystems

Abstract: Capella 399B IR-Laser-Diode CM1213
Contextual Info: 399B West Trimble Road, San Jose, CA 95131 USA • 408.382.6600 • FAX.408.382.6601 CM1213 Integrated PD+TIA DESCRIPTION FEATURES The Capella CM1213 PDIC is a low voltage integrated photodiode and transimpedence amplifier TIA for use as the photodetector in

M29W160E

Abstract: M29W160EB M29W160ET TFBGA48
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS