03BFLB Search Results

Contextual Info: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

Contextual Info: 8368602 SOL ITRON DEVICES INC_ 91D 0 2697 D T* ^ 3 3 S0LITR0N DEVICES I N C Ï Ï 1>e | 03bflbQ5 DGQabl? □ | Cjolitron Devices, Inc. S P E C I F I C A T I O N S N0<: SD T89701 T Y P E : PNP SILICON PWR. TRANS, M A X IM U M R A T IN G S CASE: TO“ 228/ AC

2N3551

Abstract: SOLITRON Solitron Transistor
Contextual Info: 836_86S2_SQLITR0N D E V I C E S ^ O litr o n S P E C IN q ” ^ DE ^03bflbD5 00012flfl 0 /93^3299 E b P C iù £ : J W S V A 3 8 V 4 NO.: c 2 N 3 3 # 9 TY PE: rfP A f g JltoO floW &Z C A SE: TO - 4 3 D e v ic e s , In c. I F I C A T I O N S F S - a c d Z P & } ') ’> '?

Contextual Info: SOLITRON DEVICES INC bl D Ë J 03bflbD2 DG01430 0 | 8368602 SOLI TR ON DEVICES I N C _ _ _ _ _6 1C 01430 p jr f c ro ^ 7 M ?aJ 4 / / V /!*/•? a u T fo rs ^ t A le r ts C E C A 11Q '[ty p e n o . ^OUlTdOK) — p. G R O U P A A N D / O R P E R F O R M A N C E C H A R A C T E R IST IC S

Contextual Info: 61C 0 1 5 6 3 ftSRftfin? SOL ITRQN DEVICES INC SOLITRON DEVICES INC bl r - 3 $ '- 2 S ' DlT| 03bflbQE DDDlSbB 7 ^ D R U O H ^ D R U O ^ S D R lU ^ S D F q U iS " N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■

NPN Transistor 600V

Abstract: ic equivalent transistor 800V 1A NPN Transistor VCEO 1000V
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC ' 9 5 D 02 8 4 9 DE |03bflbDB O O O a ö M T Ô TS D | “~ J J -/3 Devices, Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base an d emitter: > 30,000 A Aluminum

Contextual Info: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 200A, o . o n n 1 0 0 V , SDF200NA10 HE FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

N 407 Diode

Contextual Info: Æutron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRO NICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL. 407 848-4311 • TLX: SI-3 43 5 « F AX : (407) 863-5946 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - S o u r c e \/o 1 t . ( 1 )

Contextual Info: IM-CHANIUEL M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021 " _ “ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: PRODUCT CATTAIL 1 Æ tltron SCHOTTKY POWER RECTIFIERS 45V, 18A, 0.65V SDS 18045 5D5 18045 SDS 18045 SDS 18045 SDS 18045 SDS 18045 FEATURES • • • • • • • • DEVICES.INC. 1177 BLUE HERON BLVD.« RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946

Contextual Info: PRO D U CT N-CHANNEL ENHANCEMENT MOS FET 500V, 86A, 0 . 0 7 D PARAMETER FEATURES RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-STD-883 SCREENING 1 Q4 |- W -

Contextual Info: _ Si-Cr THIN FILM RESISTORS VALUES OF 10Q to 100Kfi, LASER TRIMMABLE * FEATURES Wide Range of Resistor Values Negligible Voltage Dependence Very Low Temperature Coefficient Very High Breakdown Voltage Good Matching Characteristics Very Low Temperature Drift Matching

transistor u8 2w

Abstract: transistor npn U8 2N5535 SOLITRON solitron transistors 2N5536 2N5537 2N5538 2n5533 bbc cs 1
Contextual Info: _ 8 3 6 8 6 0 2 SOL I T R O N DEVICES. INC_,_- ^6C 0 1 9 1 8 7~~33"/J_ D RADIAllUN HtsiSïÂNT NPN SILICON POWER TRANSISTORS -• bb DE|ß3böbD2 DDDnifl 7 | 2N5535 2N5536 2N5537 2N5538 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T

Contextual Info: PRODUCT CÂTÂIO' Æ lltro n P-CHANNEL ENHANCEMENT MOS FET -200V,-6.5A. 0.8n SDF9230 SDF9230 SDF9230 FEATURES • • • • • • • • ABSOLUTE MAXIMUM RATINGS PARAMETER JAA JAB JDA RUGGED PACKAGE HI -REL CONSTRUCTION CERAMIC EYELETS:JAA.JAB LEAD BENDING OPTIONS

tca150c

Abstract: 1j99 SOLITRON
Contextual Info: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications

Contextual Info: ^ l i t r o n PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 t e l. 407 848-43H fa x . (407) 863-5946 ki _ p r j A M M C I (Rg s M . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25* C) Drain Current Pulsed(3)