03APR08 Search Results
03APR08 Datasheets Context Search
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Contextual Info: 4 2 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR P U B L IC A T IO N 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR A7 D E S C R IP TIO N ECR- DATE DWN K.S K.K 03APR08 -008308 APVD |
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03APR08 AR2000 | |
Contextual Info: 4 2 T H IS DRAW IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR 2 0 0 5 - PUBLICATION REVISIO N S A LL R IG H TS R E S E R V E D . LTR A4 D ESC R IPTIO N ECR- DATE DWN 03APR08 -008308 APVD K.S K.K D 1. ONE CABLE P A C K A G E D IN A CLEAR P O LY BAG. |
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03APR08 | |
Contextual Info: 4 2 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR P U B L IC A T IO N 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR A7 D E S C R IP TIO N ECR- DATE DWN K.S K.K 03APR08 -008308 APVD |
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03APR08 AR2000 | |
GPP60A
Abstract: GPP60G JESD22-B102 J-STD-002 P600
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GPP60A GPP60G MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 GPP60G JESD22-B102 J-STD-002 P600 | |
BYW27-100GP
Abstract: BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP
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BYW27-100GP BYW27-800GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP | |
COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
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vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a | |
gp30jhe3Contextual Info: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA |
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GP30A GP30M MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 gp30jhe3 | |
20E-3Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation |
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GP02-20 GP02-40 DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 20E-3 | |
Contextual Info: CRHV Vishay Techno Thick Film Chip Resistors, High Voltage FEATURES • • • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS RESISTANCE Ω MODEL POWER RATING (W) 0.300 0.450 0.500 0.600 0.700 VOLTAGE RATING (V) (max.) 1500 1750 2000 2500 3000 |
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08-Apr-05 | |
20g0Contextual Info: CDHV 2512 Vishay Techno Thick Film Chip Dividers, High Voltage FEATURES • • • • • • ELECTRICAL SPECIFICATIONS • Resistance Range: 1 MΩ to 20 GΩ Resistance Tolerance: ± 1 % to ± 20 % Power Rating: See table Voltage Coefficient: See table Temperature Coefficient: See table |
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18-Jul-08 20g0 | |
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate |
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03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X | |
1N5624GP
Abstract: 1N5627GP JESD22-B102 J-STD-002
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1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 1N5627GP JESD22-B102 J-STD-002 | |
Vishay Roederstein ELECTROLYTIC
Abstract: MALSECL
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08-Apr-05 Vishay Roederstein ELECTROLYTIC MALSECL | |
1n4385gp-e3Contextual Info: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* |
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1N4383GP 1N4385GP, 1N4585GP 1N4586GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1n4385gp-e3 | |
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Contextual Info: 1N3611GP thru 1N3614GP & 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat *Glass Encapsulation technique is covered by |
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1N3611GP 1N3614GP 1N3957GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL DO-41) 08-Apr-05 | |
NTC 50-9
Abstract: NTC THERMISTORS K 164 ntc 0641 NTC 100 - 11 mark 837 341 NTCLS100 NTCLE400
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2002/95/EC 2002/96/EC B25/85 18-Jul-08 NTC 50-9 NTC THERMISTORS K 164 ntc 0641 NTC 100 - 11 mark 837 341 NTCLS100 NTCLE400 | |
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. - ,- Z D ETA IL S C A L E 8:1 C 1 .5 2 [.0 6 0 ] 2 2 - 2 6 AWG WIRE RANGE PLATE A R E A T O .25 0.1 3 . 0 8 7 T- . 00 10 50 1 . 7 0 T- 0O. .12 53 |
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31MAR2000 03APR08 HDE-20, | |
Contextual Info: 4 T H IS D R A W IN G 2 RELEASED IS U N P U B L IS H E D . B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . C O P Y R IG H T FOR P U B L IC A T IO N REVISIONS A L L R IG H T S R E S E R V E D . LTR A4 D E S C R IP T IO N ECR- -008308 E C R —10 —0 1 3 0 1 |
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8JUN10 03APR08 | |
Contextual Info: 4 T H IS D R A W IN G 2 IS U N P U B L IS H E D . RELEASED B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . C O P Y R IG H T FOR P U B L IC A T IO N APR 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR D E S C R IP T IO N A6 ECR- DATE DWN K.S K.K |
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03APR08 10APR05 | |
vishay mContextual Info: CRHV Vishay Techno Thick Film Chip Resistors, High Voltage FEATURES • • • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS RESISTANCE Ω MODEL POWER RATING (W) 0.300 0.450 0.500 0.600 0.700 VOLTAGE RATING (V) (max.) 1500 1750 2000 2500 3000 |
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18-Jul-08 vishay m | |
Contextual Info: 150EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature RoHS • Screw mounting only Cathode COMPLIANT • Lead Pb -free plating Anode • Designed and qualified for industrial level |
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150EBU02 12-Mar-07 | |
Contextual Info: GPP60A thru GPP60G Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.2 µA • High forward surge capability • Meets environmental standard MIL-S-19500 |
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GPP60A GPP60G MIL-S-19500 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05 | |
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current |
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1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 | |
1N5624GPContextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current |
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1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC DO-201s 08-Apr-05 |