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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 7 8_ THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE	OCR Scan	14AP87 27MY87 03AP91 12JL91 31JL91 25SE91 18MY94 26JL94 06MR95	PDF
PHD22NQ20T Abstract: 12882 Contextual Info: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features	Original	PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: 7 8_ THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE

OCR Scan

14AP87 27MY87 03AP91 12JL91 31JL91 25SE91 18MY94 26JL94 06MR95

PDF

PHD22NQ20T

Abstract: 12882
Contextual Info: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Original

PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882

PDF