03AE2 Search Results
03AE2 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 03AE2 |
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Original | 93.13KB | 2 |
03AE2 Price and Stock
Nisshinbo Micro Devices R1245S003A-E2-JEIC REG BUCK ADJ 1.2A 8HSOP |
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R1245S003A-E2-JE | Tape & Reel | 985 | 1,000 |
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| R1245S003A-E2-JE | Digi-Reel | 985 | 1 |
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| R1245S003A-E2-JE | Cut Tape | 985 | 1 |
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Nisshinbo Micro Devices R1810L003A-E2600NA IQ LOW QUIESCENT CURRENT B |
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R1810L003A-E2 | Tape & Reel | 5,000 |
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R1810L003A-E2 | Tape & Reel | 12 Weeks | 5,000 |
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R1810L003A-E2 |
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Nisshinbo Micro Devices R1290K003A-E2TRIPLE OUTPUT DCDC CONVERTER FOR |
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R1290K003A-E2 | Tape & Reel | 1,000 |
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R1290K003A-E2 | Tape & Reel | 12 Weeks | 1,000 |
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Nisshinbo Micro Devices RP154L003A-E2IC REG LIN 1.5V/2.8V DFN1216-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RP154L003A-E2 | Tape & Reel | 5,000 |
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RP154L003A-E2 | Tape & Reel | 12 Weeks | 5,000 |
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Nisshinbo Micro Devices R1294L103A-E2TRIPLE OUTPUT DCDC CONVERTER FOR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R1294L103A-E2 | Tape & Reel | 1,000 |
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R1294L103A-E2 | Tape & Reel | 12 Weeks | 1,000 |
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R1294L103A-E2 |
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03AE2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SO 8 PSMN085-150K N-channel TrenchMOS SiliconMAX standard level FET Rev. 3 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for |
Original |
PSMN085-150K | |
philips capacitor 1000uf 25V
Abstract: PHILIPS MOSFET MARKING MO-220 PIP202-12M
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Original |
PIP202-12M M3D797 PIP202-12M philips capacitor 1000uf 25V PHILIPS MOSFET MARKING MO-220 | |
PSMN085-150KContextual Info: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package. |
Original |
PSMN085-150K OT96-1 PSMN085-150K OT96-1, | |
MS-012AA
Abstract: Si4410DY
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Original |
Si4410DY M3D315 OT96-1 OT96-1, MS-012AA | |
PSMN085-150KContextual Info: PSMN085-150K N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 1 March 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for |
Original |
PSMN085-150K PSMN085-150K | |
MO-220
Abstract: PIP201-12M origin diode sp
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Original |
PIP201-12M M3D797 PIP201-12M MO-220 origin diode sp | |
origin diode sp
Abstract: PHILIPS MOSFET MARKING MO-220 PIP202-12M PIP202-12M-2
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Original |
PIP202-12M-2 M3D797 PIP202-12M origin diode sp PHILIPS MOSFET MARKING MO-220 PIP202-12M-2 | |
SI4410DYContextual Info: SI4410DY N-channel TrenchMOS logic level FET Rev. 03 — 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in |
Original |
SI4410DY SI4410DY | |
06AE1
Abstract: 06AE2 03AE1 03AE2 06AE3
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Original |
5x20mm 115VAC 250VAC 2250VDC 1450VDC 50/60Hz 115/250VAC 015uF 3300pF 04Max. 06AE1 06AE2 03AE1 03AE2 06AE3 | |
PDDO
Abstract: PIP201-12M-3 MO-220 PIP201-12M MLF68
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Original |
PIP201-12M-3 M3D797 PIP201-12M PDDO PIP201-12M-3 MO-220 MLF68 | |
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Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 . |
Original |
Si4410DY M3D315 OT96-1 OT96-1, MBK187 |