03AB60 Search Results

15218

Abstract: 15218 pin details SOT323 FET N PMF3800SN
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Very fast switching

fet 2n7002K

Abstract: MSB003 2N7002K 03ab09
Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

FET marking codes

Abstract: PMF3800SN transistor sc-70 marking codes
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

fet 2n7002K

Abstract: 03an72 2N7002K
Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

PMF3800SN

Abstract: 03ab09
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 01 — 8 February 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field Effect Transistor FET in a plastic package using TrenchMOS™ technology.

BSH112

Contextual Info: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.