03MAY2006 Search Results

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I SIONS FT RESERVED. . 7 5 0± . 0 I 5 LTR DESCRIPTION DATE DWN APVD R E V I S E D E C O - 06 - 0 1 0 3 2 2 03MAY2006

Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

6942

Contextual Info: VN750 High-side driver Datasheet − production data Features Type VN750 VN750S VN750PT VN750-B5 RDS on IOUT VCC SO-8 60 mΩ 6A PENTAWATT 36 V • CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection

Contextual Info: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VNQ810PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 160 m(1) 5 A(1) 36 V 1. Per each channel. PowerSSO-24 •CMOS compatible inputs Description •Open Drain status outputs •On-state open load detection The VND810PEP-E is a monolithic device made

JESD97

Abstract: LIS3L02AL LIS3L02ALTR
Contextual Info: LIS3L02AL MEMS INERTIAL SENSOR: 3-axis - +/-2g ultracompact linear accelerometer Features • 2.4V to 3.6V single supply operation ■ Low power consumption ■ ±2g full-scale ■ 0.5mg resolution over 100hz bandwidth ■ Embedded self test ■ Output voltage, offset and sensitivity

STTH3002W

Abstract: STTH 150 60 PI STTH3002 STTH3002G STTH3002G-TR STTH3002PI
Contextual Info: STTH3002 Ultrafast recovery diode Main product characteristics IF AV 30 A VRRM 200 V Tj (max) 175° C VF (typ) 0.77 V trr (typ) 22 ns A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time

Contextual Info: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection

Contextual Info: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection

vnd830 package information

Abstract: VNQ830PTR-E ISO7637 VND830-E VNQ830P-E
Contextual Info: VNQ830P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830P-E 65 mΩ(1) 6A 36 V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input

Contextual Info: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V ) s ( ct 10 1. Per each channel. 1 u d o PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET

Contextual Info: VN750 High-side driver Datasheet − production data Features Type RDS on IOUT VCC 60 mΩ 6A u d o CMOS compatible input • On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection ■ Undervoltage and overvoltage shutdown

STTH2002G

Contextual Info: STTH2002 Ultrafast recovery diode Features K A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High Tj ■ Insulating voltage: 2500 V rms ■ Capacitance: 7 pF K A A K Description K

do-201 footprint

Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
Contextual Info: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt

ISO7637

Abstract: VND830-E VNQ830P-E VNQ830PTR-E VND830E
Contextual Info: VNQ830P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830P-E 65mΩ(1) 6A 36V 1. Per each channel. SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection ■ Off-state open load detection

Contextual Info: VND810SP Double channel high-side driver Features Type RDS on IOUT VCC VND810SP 160 mΩ(1) 3.5 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VN920 Single channel high-side solid-state relay Features Type RDS on IOUT VCC VN920 VN920-B5 VN920SO 16 mΩ 30 A 36 V P2PAK PENTAWATT • CMOS compatible input ■ Proportional load current sense ■ Shorted load protection ■ Under-voltage and over-voltage shutdown

ISO7637

Abstract: VND810M VNQ810M VNQ810M13TR VNQ830M
Contextual Info: VNQ810M Quad channel high side driver Features Type RDS on IOUT VCC VNQ810M 150mΩ(1) 0.6A(1) 36V 1. Per each channel. • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection ■ Shorted load protection

ISO7637

Abstract: VND830 VND83013TR
Contextual Info: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V 1. Per each channel. SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection

VND920

Contextual Info: VND920 Double channel high-side solid-state relay Features Type RDS on VND920 16 mΩ IOUT (1) 35 A VCC 36 V 1. Per channel with all the output pins connected to the PCB. SO-28 (double island) • CMOS compatible input ■ Proportional load current sense ■

Contextual Info: VN920D-B5 VN920DSO High-side driver Features Type RDS on IOUT VCC VN920D-B5 VN920DSO 18 mΩ 30 A 36 V P2PAK • CMOS-compatible input ■ On-state open load detection ■ Off-state open load detection ■ Shorted load protection ■ Under-voltage and over-voltage shutdown

STTH2R02U

Contextual Info: STTH2R02 Ultrafast recovery diode Main product characteristics IF AV 2A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times

SMC/DOC-0000181564

Contextual Info: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt

STTH802D

Contextual Info: STTH802 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 200 V Tj (max) 175° C VF (typ) 0.8 V trr (typ) 17 ns K A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time