03MAR Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 1 2 3 | AUG .2 0 0 6 . REVISIONS ALL RIGHTS RESERVED. P LTR C DESCRIPTION REVISED. EC R —0 9 —0 0 4 2 6 2 DATE OWN APVD 03MAR09 FY WK 0.40 * 0.15 MIDDLE CLIP

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT 2 3 RIGHTS - - DIST LOC RESERVED. 00 EH BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S LTR F D E SC RIPTIO N DATE DWN 03MAR2006 REV PER ECO— 0 6 — 0 0 5 0 0 4 APVD LHS c c

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL 20 PUBLICATION R 1G H T S LOC D I ST FT RESERVED. R E V LTR I S I O N S DESCRIPTION R E L E A S E D EC 0 G 3 B - 0 2 0 I - 0 4 2 . DWN DATE 03MAR2ÛÛ4

Contextual Info: . RIGHTS RESERVED R E V IS IO N S LTR DESCRIPTION DATE LOGO CHANGE DWN 03MAR2013 TY APVD KZ MATERIALS: -HOUSING: HIGH TEMPERATURE NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm THICK, BRASS PREP LATED WITH 0.76um MIN S E M I -B RIGH T NICKEL; POST-DIPPED W I T H 2 um M I N S A C 3 0 5 A L L O Y L E A D F R E E S O L D E R

NS-2B

Contextual Info: r 6 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 5 4 H 3 2 PU B LIC ATIO N LOC AD A LL RIGHTS RESERVED. COPYRIGHT - By - R E VIS IO N S D IS T 00 LTR E3 D E S C R IP T IO N REVISED PER DATE DWN PSK MW 03MAR1 ' ECO-11-005556 APVD Materials No. Component name

Contextual Info: . RIGHTS RESERVED R EV IS IO N S LTR DESCRIPTION LOGO DATE CHANGE DWN 03MAR 2013 TY APVD KZ M A T P R IA L S : - HOUSING: H I G H T E M P E R A T U R E N Y L O N , B L A C K , UL 9 4 V - 0 - SHIELD: 0 . 2 0 m m THICK, B R A S S P R E P L A T E D W IT H 0.76 nm MIN S E M I - B R I G H T N ICKEL; P O S T - D I P P E D

Contextual Info: 7 T H I S DRAWING JÊL COPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N , 6 4 5 3 2 19 BY AMP INCORPORATED. D I ST LOC ALL R IG H T S R ES E R V E D . REVISIONS 22 AA DESCRIPTION H REACTIVATED: -1 PE R 03MAR03 D L D EC 0 5 1 1 - 0 0 3 4 - 0 3

Contextual Info: PRODUCT NO 28.0 !j;f - 9054-8-601 26.0 *0.2 ON TIP *0.13 ON BASE 2.0 *0.1 NON ACCUM *0.2 . ON TIP i 2.0 * DATE DESCRIPTION ECR S10288 RLSO BS LOW BY ECR S20202 BS LOW 25JUL92 ECR S20292 BS LOW 280CT92 ECR S20300 BS LOW Q3N0V92 ECR S30073 YB TAN 03MAR93 28AUG91

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR B DESCRIPTION DATE REVISED PER EC 0 S 1 1 - 0 0 7 1 - 0 4 DWN APVD JB CF 03MARO4 THIS DRAWING SHOWN ASSEMBLED, BUT SHIPPED

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 2 5 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S P LTR F B ±0.38 [±.015] - C - -X- 2.54 [.100] D SPACES -Y- I 9.19 [.362] _n REVISED PER

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA MECHANICAL: DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 — 03M A R 2005 LV DF/CG - S H I E L D - .010" T H I C K , C 2 6 8 0 0 B R A S S P R E P L A T E D W I T H 3 0 j i INCH MI N S E M I - B R I G H T

vs-10bq100

Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

s8058

Contextual Info: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

land pattern for TSOP input id

Abstract: SQS423EN-T1-GE3
Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V

Contextual Info: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V

V1F diode

Abstract: 10MQ040NP
Contextual Info: VS-10MQ040NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

IDC7328

Contextual Info: IDC-7328 Vishay Dale High Current, Surface Mount Inductors FEATURES • • • • • High energy storage Low resistance Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1