03MAR Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 1 2 3 | AUG .2 0 0 6 . REVISIONS ALL RIGHTS RESERVED. P LTR C DESCRIPTION REVISED. EC R —0 9 —0 0 4 2 6 2 DATE OWN APVD 03MAR09 FY WK 0.40 * 0.15 MIDDLE CLIP

Contextual Info: . RIGHTS RESERVED R E V IS IO N S LTR DESCRIPTION DATE LOGO CHANGE DWN 03MAR2013 TY APVD KZ MATERIALS: -HOUSING: HIGH TEMPERATURE NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm THICK, BRASS PREP LATED WITH 0.76um MIN S E M I -B RIGH T NICKEL; POST-DIPPED W I T H 2 um M I N S A C 3 0 5 A L L O Y L E A D F R E E S O L D E R

Contextual Info: . RIGHTS RESERVED R EV IS IO N S LTR DESCRIPTION LOGO DATE CHANGE DWN 03MAR 2013 TY APVD KZ M A T P R IA L S : - HOUSING: H I G H T E M P E R A T U R E N Y L O N , B L A C K , UL 9 4 V - 0 - SHIELD: 0 . 2 0 m m THICK, B R A S S P R E P L A T E D W IT H 0.76 nm MIN S E M I - B R I G H T N ICKEL; P O S T - D I P P E D

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR B DESCRIPTION DATE REVISED PER EC 0 S 1 1 - 0 0 7 1 - 0 4 DWN APVD JB CF 03MARO4 THIS DRAWING SHOWN ASSEMBLED, BUT SHIPPED

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 2 5 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S P LTR F B ±0.38 [±.015] - C - -X- 2.54 [.100] D SPACES -Y- I 9.19 [.362] _n REVISED PER

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA MECHANICAL: DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 — 03M A R 2005 LV DF/CG - S H I E L D - .010" T H I C K , C 2 6 8 0 0 B R A S S P R E P L A T E D W I T H 3 0 j i INCH MI N S E M I - B R I G H T

vs-10bq100

Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

s8058

Contextual Info: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance

Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

land pattern for TSOP input id

Abstract: SQS423EN-T1-GE3
Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V

Contextual Info: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

IDC7328

Contextual Info: IDC-7328 Vishay Dale High Current, Surface Mount Inductors FEATURES • • • • • High energy storage Low resistance Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

TSOP8

Abstract: si7401
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

si7415dn-t1-ge3

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

M8340102K

Abstract: M8340101M RZ010 m8340102
Contextual Info: MDM Military M83401 Vishay Dale Thick Film Resistor Networks, Military, MIL-PRF-83401 Qualified, Type RZ010 and RZ020, Dual-In-Line, Molded DIP FEATURES • • • • • • Isolated, bussed and dual terminator schematics available MIL-PRF-83401 qualified

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®