03FEB03 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 14 LTR DESCRIPTION REV PER 0G 3A— 0 0 9 2 — 03 D WIRE RANGE ¿A_J 1 6 - 1 4 AWG STRANDED DWN APVD 03FEB03

Contextual Info: Si4732CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES D D D D D D D D D D 4.5- to 30-V Operation Under-Voltage Lockout Shoot Through Resistant Fast Switching Times SO-16 Package Driver Impedance—3 W 30-V MOSFETs

Overload Sensor 7236

Abstract: 100-W Si91872 Si91872DMP-12-T1 Si91872DMP-18-T1
Contextual Info: Si91872 New Product Vishay Siliconix 300-mA Low-Noise LDO Regulator With Error Flag and Discharge Option FEATURES D D D D D D D D D D D D D D D Output—Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.5, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options

SUV90N06-05

Contextual Info: SUV90N06-05 New Product Vishay Siliconix N-Channel 60-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0052 @ VGS = 10 V 60 90 a 0.0072 @ VGS = 4.5 V APPLICATIONS D Isolated DC/DC Converters - Primary-Side Switch D Automotive - Fan Motors

Si4728

Abstract: Si4728CY 215S1
Contextual Info: Si4728CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 30-V MOSFETs High Side: 0.018 W @ VDD = 4.5 V Low Side: 0.0105 W @ VDD = 4.5 V

Contextual Info: BG 1972-6100-010 Vishay ESTA High Voltage Generator 60KV/100µA FEATURES • Powder or flock coating applications • Compact dimensions • Low weight • High reliability GENERAL SPECIFICATIONS Part-No. BG 1972-6100-010 Control unit 1972-6123-020 Type of construction

Contextual Info: BG 1972-6100-010 Vishay ESTA High Voltage Generator 60KV/100µA FEATURES • Powder or flock coating applications • Compact dimensions • Low weight • High reliability GENERAL SPECIFICATIONS Part-No. BG 1972-6100-010 Control unit 1972-6123-020 Type of construction

ESTA

Contextual Info: BG 1972-6100-010 Vishay ESTA High Voltage Generator 60KV/100µA FEATURES • Powder or flock coating applications • Compact dimensions • Low weight • High reliability GENERAL SPECIFICATIONS Part-No. BG 1972-6100-010 Control unit 1972-6123-020 Type of construction

100kV

Abstract: 13113
Contextual Info: BG 1972-6123-010 Vishay ESTA High Voltage Generator 100KV/100µA FEATURES • Powder or flock coating applications • Compact dimensions • Low weight • High reliability GENERAL SPECIFICATIONS Part-No. BG 1972-6123-010 Control unit 1972-6123-020 Type of construction

Si4726CY

Contextual Info: Si4726CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side: 0.0065 W @ VDD = 4.5 V

Contextual Info: Package Information Vishay Siliconix TO−263 D2PAK : 3−LEAD - B- A INCHES E C2 L2 - A- E1 D1 D L 1 3 L3 2 A A b2 E2 Detail A b C e 0.010 M A M L4 2 PL 0_ - 5_ Dim A b b1 b2 c* c1 c2 D D1 E E1 E2* e L L1 L2 L3 L4 M Min Max 0.160 0.190 0.020 0.039 0.020

MLP33-5

Contextual Info: Package Information Vishay Siliconix MLP33−5 PowerPAKr D2 L Q H 8 1 Z e 1 E2 3 4 Q 5 b 4 E1 E 2 2 L1 Q A Q A1 c DETAIL Z 2 D1 D NOTES: 1. Inch will govern 2. Dimensions D1 and E1 do not include mold gate burrs. MILLIMETERS Dim A A1 b c D D1 D2 E E1 E2 e

Contextual Info: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

Si4728CY

Contextual Info: Si4728CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 30-V MOSFETs High Side: 0.018 W @ VDD = 4.5 V Low Side: 0.0105 W @ VDD = 4.5 V

SIL6020

Abstract: transformer step down 230 V 50 Hz 9 V HICAL sil6020 step down transformer 230 v to 12 v topswitch-gx EP-34 "general semiconductor diode" vogt 408 15 EPR-34 of transformer step down 230 V 50 Hz 9 V
Contextual Info: Engineering Prototype Report for EP-34 – Single Output 30 W AC-DC Power Supply Using TOP245Y TOPSwitch-GX Title Specification Universal Input, 12 V at 30 W Output Application Generic Author Power Integrations Applications Department Document Number

HPC0402A

Abstract: HPC0402
Contextual Info: HPC0402A Vishay High Performance, High Precision Surface Mount 0402 Capacitor FEATURES • Patent pending • New technology surface mount capacitor based on a special semi-conductor process • Construction reduces the parasitic inductance and brings the SRF values to ultra-high frequencies

100kV

Contextual Info: BG 1972-6123-010 Vishay ESTA High Voltage Generator 100KV/100µA FEATURES • Powder or flock coating applications • Compact dimensions • Low weight • High reliability GENERAL SPECIFICATIONS Part-No. BG 1972-6123-010 Control unit 1972-6123-020 Type of construction

Contextual Info: TH I S DRAW ING IS COP Y R I G H T 3\ 5 . RELEASED BY 20 ALL '2\ UNPUBLI S H E D . TYCO ELECTRONICS DIMENSIONS OPTIMIZED F OR ARE CORPORATION F OR I DENT I F I E R . PROTECTIVE LABEL FERRULE MUS T B E PRODUCT P U B L I C A T I ON R IGHTS HAS APPEIED AFTER

Si4726CY

Contextual Info: Si4726CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side: 0.0065 W @ VDD = 4.5 V

SUM60N08-07C

Abstract: S-03076
Contextual Info: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS

Contextual Info: Si4728CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 30-V MOSFETs High Side: 0.018 W @ VDD = 4.5 V Low Side: 0.0105 W @ VDD = 4.5 V

regulator ic 15 b 7135 3 pin diagram

Abstract: 7133 A-1 7136 low drop out regulator regulator ic 15 b 7135 3 pin diagram datasheet voltage regulator 7136 datasheet 7135 marking BP 5-PIN 100-W 7135 is a low dropout current regulator Si91871DMP-12-T1
Contextual Info: Si91871 New Product Vishay Siliconix 300-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.5, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options