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    036N12N Search Results

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    036N12N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB036N12N3GATMA1

    MOSFET N-CH 120V 180A TO263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPB036N12N3GATMA1 Tape & Reel 749 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.96
    • 10000 $2.93
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    IPB036N12N3GATMA1 Digi-Reel 749 1
    • 1 $7.60
    • 10 $5.14
    • 100 $3.74
    • 1000 $3.59
    • 10000 $3.59
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    Avnet Americas IPB036N12N3GATMA1 Tape & Reel 8 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.75
    • 10000 $2.49
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    Mouser Electronics IPB036N12N3GATMA1 1,430
    • 1 $7.60
    • 10 $4.09
    • 100 $3.75
    • 1000 $3.39
    • 10000 $3.39
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    Newark IPB036N12N3GATMA1 Bulk 207 1
    • 1 $7.40
    • 10 $4.98
    • 100 $3.61
    • 1000 $3.41
    • 10000 $3.41
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    Rochester Electronics IPB036N12N3GATMA1 5,000 1
    • 1 -
    • 10 -
    • 100 $2.93
    • 1000 $2.62
    • 10000 $2.46
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    TME IPB036N12N3GATMA1 1
    • 1 $6.18
    • 10 $4.77
    • 100 $3.56
    • 1000 $3.36
    • 10000 $3.36
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    EBV Elektronik IPB036N12N3GATMA1 58,000 9 Weeks 1,000
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    Infineon Technologies AG IPB036N12N3 G

    MOSFETs N-Ch 120V 180A D2PAK-6 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB036N12N3 G 1,138
    • 1 $7.92
    • 10 $5.30
    • 100 $4.26
    • 1000 $3.04
    • 10000 $3.04
    		Buy Now

    036N12N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    036N12N

    Abstract: IEC61249-2-21 JESD22 IPB036N12N3 G dd-103
    Contextual Info: 036N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 3.6 mΩ ID 180 A • Very low on-resistance RDS(on) • N-channel, normal level


    Original     		IPB036N12N3 IEC61249-2-21 PG-TO263-7 036N12N 036N12N IEC61249-2-21 JESD22 IPB036N12N3 G dd-103 PDF

    036N12N

    Abstract: IPB036N12N3 G JESD22 STH120 IPB036N12N
    Contextual Info: 036N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 3.6 mΩ ID 180 A • Very low on-resistance RDS(on) • N-channel, normal level


    Original     		IPB036N12N3 PG-TO263-7 036N12N 036N12N IPB036N12N3 G JESD22 STH120 IPB036N12N PDF