034N03L Search Results
034N03L Price and Stock
Infineon Technologies AG BSC034N03LSGATMA1MOSFET N-Channel 30V 22A (Ta), 100A (Tc) 8-SON T/R |
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BSC034N03LSGATMA1 | 5,723 | 1 |
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BSC034N03LSGATMA1 | 1 |
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BSC034N03LSGATMA1 | 9,010 |
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Infineon Technologies AG IPP034N03LGXKSA1MOSFET N-Channel 30V 80A (Tc) TO-220-3 Tube |
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IPP034N03LGXKSA1 | 689 | 1 |
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IPP034N03LGXKSA1 | 13,091 |
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Infineon Technologies AG IPP034N03LGHKSA1Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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IPP034N03LGHKSA1 | 11,809 |
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IPP034N03LGHKSA1 | 7,260 |
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Infineon Technologies AG IPB034N03LGATMA1Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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IPB034N03LGATMA1 | 10,133 |
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Infineon Technologies AG BSC034N03LSGXTPower Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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BSC034N03LSGXT | 492 |
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034N03L Datasheets Context Search
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Contextual Info: 034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level |
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bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls | |
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Contextual Info: 034N03L G Type 034N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3.4 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications |
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ipp034n03lipb034n03lpg-to220-3-1pg-to263-3+1 | |
034N03L
Abstract: IEC61249-2-21 JESD22 DSV60
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ipp034n03lipb034n03liec61249-2-21pg-to220-3-1+4 | |
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Contextual Info: 034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level |
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bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls | |
034n03l
Abstract: IEC61249-2-21 JESD22 IPB034N03L G IPP034N03L G
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ipp034n03lipb034n03liec61249-2-21pg-to220-3-1+5 | |
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Abstract: IPP034N03L G JESD22 PG-TO220-3
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ipp034n03lipb034n03lpg-to220-3pg-to263-3+3 | |
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Contextual Info: 034N03L G Type 034N03L G 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.4 m9 • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications |
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ipp034n03lipb034n03liec61249-2-21pg-to220-3-1+3 | |
034N03LSContextual Info: 034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3.7 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications PG-TDSON-8 |
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034n03lContextual Info: 034N03L G Type 034N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3.4 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications |
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ipp034n03lipb034n03lpg-to220-3-1034n03l+1 | |
034N03LS
Abstract: JESD22 BSC034N03LSC
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bsc034n03lsbsc034n03lsc034n03lsjesd22 | |
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Abstract: IPP034N03L G IPB034N03 IPB034N03L G
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ipp034n03lipb034n03liec61249-2-21pg-to220-3-1+5 | |
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Abstract: BSC034N03LSC IEC61249-2-21 JESD22 034n03l
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bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls+2 |