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    031NE7N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB031NE7N3GATMA1

    IPB031NE7 - 12V-300V N-Channel Power MOSFET
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    Rochester Electronics IPB031NE7N3GATMA1 5,000 1
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    Vyrian IPB031NE7N3GATMA1 11,151
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    031NE7N Datasheets Context Search

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    IPB031NE7N3 G

    Abstract: 031NE7N IEC61249-2-21 JESD22 2506v
    Contextual Info: 031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb031ne7n3iec61249-2-21pg-to263-3031ne7n+3ipb031ne7n3 gjesd222506v PDF

    031NE7N

    Abstract: JESD22 IPB031NE7N3 G
    Contextual Info: 031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb031ne7n3pg-to263-3031ne7njesd22+1ipb031ne7n3 g PDF