030N0 Search Results
030N0 Price and Stock
ROHM Semiconductor RTR030N05FRATLTransistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 |
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RTR030N05FRATL | 1 |
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RTR030N05FRATL | 19 Weeks | 3,000 |
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onsemi NVTFWS030N06CTAGTransistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 |
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NVTFWS030N06CTAG | 1 |
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NVTFWS030N06CTAG | 53 Weeks | 1,500 |
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NVTFWS030N06CTAG | 53 Weeks | 1,500 |
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NVTFWS030N06CTAG | 18,000 |
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Goford Semiconductor GT030N08TTransistor: N-MOSFET; SGT; unipolar; 80V; 155A; 140W; TO220 |
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GT030N08T | 1 |
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ROHM Semiconductor RHP030N03T100Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 |
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RHP030N03T100 | 1 |
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RHP030N03T100 | 6,300 | 1 |
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RHP030N03T100 | 5,000 | 24 Weeks | 3,000 |
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RHP030N03T100 | 19 Weeks | 1,000 |
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onsemi FDMS030N06BTransistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 |
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FDMS030N06B | 1 |
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FDMS030N06B | Tape & Reel | 52 Weeks | 3,000 |
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FDMS030N06B | 3,252 | 1 |
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FDMS030N06B | 1,248 |
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FDMS030N06B | 53 Weeks | 3,000 |
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FDMS030N06B | 50 Weeks | 3,000 |
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030N0 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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030N03lsContextual Info: 030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel |
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bsc030n03ls030n03ls | |
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Contextual Info: 030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested |
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bsc030n03msiec61249-2-21030n03ms | |
BSC030N04NS
Abstract: IEC61249-2-21 JESD22 030N04NS
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bsc030n04nsiec61249-2-21030n04nsjesd22 | |
030N03MS
Abstract: 030N03 BSC030N03MS IEC61249-2-21 JESD22
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bsc030n03msiec61249-2-21030n03ms030n03+1 | |
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Contextual Info: 030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel |
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bsc030n03ms030n03ms | |
030N03MS
Abstract: BSC030N03MS JESD22 BSC030N03MS G 030N03 GS2575
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bsc030n03ms030n03msjesd22bsc030n03ms g+2 | |
030N04NS
Abstract: FET 4900 BSC030N04NS JESD22 PG-TDSON-8 BSC030N04NS G D49 MARKING
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bsc030n04ns030n04nsfet 4900jesd22+3 | |
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Contextual Info: 030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel |
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bsc030n03ms030n03ms | |
030N03ls
Abstract: BSC030N03LS JESD22
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bsc030n03ls030n03lsjesd22 | |
030N04NS
Abstract: PG-TDSON-8
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bsc030n04ns030n04nspg-tdson-8 | |
030N03ls
Abstract: 030n03l PG-TDSON-8
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bsc030n03ls030n03ls030n03lpg-tdson-8 | |
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Contextual Info: 030N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 |
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bsc030n04nsiec61249-2-21030n04ns | |
IEC61249-2-21
Abstract: IPB030N08N3 JESD22
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ipb030n08n3iec61249-2-21pg-to263-7030n08n+1 | |
030N08N
Abstract: IPB030N08N3 JESD22 GS5008
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ipb030n08n3pg-to263-7030n08n10ngerous+2 | |
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Contextual Info: 030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3 mΩ • Optimized technology for DC/DC converters ID • Qualified according to JEDEC1) for target applications 100 A PG-TDSON-8 • N-channel; Logic level |
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bsc030n03lsiec61249-2-21030n03ls | |