0304 N CHANNEL Search Results

MG15Q6ES51

Abstract: 15Q6ES51 transistor bc 930
Contextual Info: TOSHIBA MG15Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES51A

Abstract: toshiba Igbts MG25Q6ES51
Contextual Info: TOSHIBA MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG15

Abstract: MG15Q6ES51A mg15q6es51
Contextual Info: TOSHIBA MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

MG25Q6ES51

Abstract: MG25Q6ES
Contextual Info: TOSHIBA MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fnU nfiF ^li • ■ MF- lap ta «v v ■ m a HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51A HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. EQUIVALENT CIRCUIT

MG10Q6ES51A

Abstract: 001-512-01
Contextual Info: TOSHIBA MG10Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A M G15Q 6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 Q 6 E S 5 1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

YTAF630

Abstract: 0304 n channel YTAf diode marking 1AA
Contextual Info: TO SHIBA YTAF630 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV Y T Ä F f i i f l INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 +0.3

Contextual Info: T O SH IB A MG10Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fn in n fiF^ u • lap ta «v v ■ m a HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

YTAF640

Abstract: YTAf
Contextual Info: TO SHIBA YTAF640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTAF640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • 10 ± 0.3

Contextual Info: TO SHIBA TPCS8201 TOSHIBA FIELD EFFECT TRANSISTOR T P SILICON N CHANNEL MOS TYPE U-MOSH r s j o m INDUSTRIAL APPLICATIONS Unit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS □ □II□II□ I IH Low Drain-Source ON Resistance : Rd S(ON) —23mO (Typ.)

Contextual Info: T O SH IB A SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : RQg = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package MAXIMUM RATINGS (Ta = 25°C) (Q1, Q2 COMMON)

Contextual Info: T O SH IB A MG10Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 10Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IG BTs B u ilt Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MIG100J201 HC TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M I G 1 0 0 J 2 0 1 HC HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units

Contextual Info: T O SH IB A TENTATIVE MIG75J201 HC TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG75J201HC HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

Contextual Info: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE • Mr SILICON N CHANNEL IGBT lar ta «v v ■ m a HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

YTAF620

Abstract: YTAf6
Contextual Info: TO SHIBA YTAF620 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTAF620 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • 10 ± 0.3

IS320

Abstract: YTAf
Contextual Info: TOSHIBA YTAF840 TOSHIBA FIELD EFFECT TRANSISTOR Y T A SILICON N CHANNEL MOS TYPE zr-MOSV F R i i l INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 • • • • Low Drain-Sorce ON Resistance : Rd S (ON) —0.750 (Typ.)

Contextual Info: T O SH IB A M IG50J201 HC TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG50J201HC HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

Contextual Info: T O SH IB A M IG50J201 HC TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG50J201HC HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

Contextual Info: TO SHIBA YTAF830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV Y T A F R 3 fl HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 —I ^