030 18A DIODE Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

Contextual Info: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT22F100J 1000V, 22A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT22F100J

Abstract: MIC4452
Contextual Info: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT22F100J

Abstract: MIC4452 32007
Contextual Info: APT22F100J 1000V, 22A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT34F100B2 APT34F100L 1000V, 34A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

IRF9140

Abstract: SHD218409 SHD218409A SHD218409B
Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.2 Ohm, -18A MOSFET • Electrically Isolated Hermetically Sealed • Low RDS on • Equivalent to IRF9140 Series

APT34F100L

Abstract: APT34F100B2 MIC4452
Contextual Info: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT34F100B2

Abstract: APT34F100L MIC4452
Contextual Info: APT34F100B2 APT34F100L 1000V, 34A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

SHD218409A

Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

419F

Abstract: APT12067JFLL APT60D120B TR4010 MAX4420
Contextual Info: APT12067JFLL 1200V 17A 0.670Ω POWER MOS 7 R Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT26M100JCU2

Abstract: sic-diode 1000v APT0502 diode schottky 1000V 10a
Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

diode schottky 1000V 10a

Abstract: SiC MOS APT0502
Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT12067JFLL 1200V 17A 0.670Ω POWER MOS 7 R Symbol VDSS SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

irgph50ud

Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Contextual Info: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

IRF 1640 G

Abstract: irf 1640 mosfet
Contextual Info: IRFR3410 IRFU3410 D-Pak IRFR3410 Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage

Contextual Info: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

irfr3518

Abstract: AN1001 EIA-541 IRFU3518
Contextual Info: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

Contextual Info: IRFR3518 IRFU3518 D-Pak IRFR3518 Applications l High frequency DC-DC converters I-Pak IRFU3518 Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN1001

Abstract: EIA-541 IRFR120 IRFR3418 IRFU3418 U120 b965
Contextual Info: PD - 94452 IRFR3418 IRFU3418 HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See