02JUL07 Search Results
02JUL07 Datasheets Context Search
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Contextual Info: THIS DRAWING IS UNPUBLISHED. WD COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR B DESCRIPTION DATE DWN 02JUL07 E C O —0 7 —0 0 9 0 8 APVD MB MS TERMINAL NUMBER SPECIFICATIONS |
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02jul0750milliamps10microamps26jan06+1 | |
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Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N F ECO —07- 02JUL07 |
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02jul0710micr0amps250vac | |
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Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S P LTR E 12.00 [.472] D 7 0 4 .0 0 [0.157] NOTE: TERMINAL NUMBERS ARE |
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02jul07ul94hbfsm102 | |
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Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO 2 3 E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N H 0 1 .3 0 3 . 0 0 D EEP |
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02jul07 | |
Si4662DYContextual Info: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS |
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si4662dysi4662dy-t1-e308-apr-05 | |
195d SPRAGUE
Abstract: 195D
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eia-481-108-apr-05195d sprague195d | |
592D228X6R3X220H
Abstract: 592D
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eia-481-1535baac08-apr-05592d228x6r3x220h+1 | |
B 503 Potentiometers
Abstract: potentiometer Sfernice
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p10xx08-apr-05b 503 potentiometerspotentiometer sfernice | |
JESD22-B102D
Abstract: J-STD-002B
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do-201ad2002/95/ec2002/96/ec08-apr-05+2 | |
68B50Contextual Info: New Product SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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suu/sud50n04-16po-251o-252sud50n04-16p-e3+3 | |
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Contextual Info: SiP4612A/B Vishay Siliconix Protected 1-A High-Side Load Switch DESCRIPTION FEATURES SiP4612A/B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4 V to 5.5 V and handle a continuous current of 1 A. The user settable current limit protects the input supply voltage from |
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sip4612a/btsc75-608-apr-05 | |
Marking 7133-1
Abstract: Si3424BDV-T1-E3 7133-1
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si3424bdvsi3424bdv-t1-e308-apr-05marking 7133-1+1 | |
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Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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bas170ws-v2002/95/ec2002/96/ecod323+5 | |
JESD22-B102D
Abstract: J-STD-002B UG06A UG06B UG06C UG06D
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ug06aug06dmpg062002/95/ec+6 | |
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ua712
Abstract: Si5915BDC
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si5915bdcsi5915bdc-t1-e318-jul-08ua712 | |
B 103 Potentiometers
Abstract: 500R
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18-jul-08b 103 potentiometers500r | |
597D687X
Abstract: 597D 597D108X 597D336X 597D227X
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08-apr-05597d687x597d597d108x+2 | |
Si4636DY
Abstract: Si4636DY-T1-E3 si4636
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si4636dysi4636dy-t1-e308-apr-05si4636 | |
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Contextual Info: New Product Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) COMPLIANT 15 nC APPLICATIONS |
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si7848bdpsi7848bdp-t1-e308-apr-05 | |
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Contextual Info: New Product SUU/SUD50N04-08P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.008 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS |
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suu/sud50n04-08po-251o-252sud50n04-08p-e3+2 | |
61209
Abstract: ptc application note PTCTT95R100GTE
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18-jul-0861209ptc application noteptctt95r100gte | |
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Contextual Info: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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sia917djsc-70-6sia917dj-t1-e308-apr-05 | |
OZ 9910 a
Abstract: vishay spectrol 534 spectrol 534 32UNEF 500R BO10 spectrol model 534
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turns/534turns/53508-apr-05oz 9910 a+6 | |
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Contextual Info: 20CTQ.PbF Series Vishay High Power Products Schottky Rectifier, 20 A FEATURES • 175 °C TJ operation Pb-free • Center tap TO-220 package • Low forward voltage drop • High frequency operation Base 2 common cathode Available RoHS* COMPLIANT • High purity, high temperature epoxy |
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20ctqo-220o-220ab12-mar-07 | |