02DEC02 Search Results

Contextual Info: 1UI5 BRÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ — !- BY TYCO ELECTRONICS CORPORATION. LOC G AU" RIGHT5 RESERVED.

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OS8104

Abstract: Oasis Oasis SiliconSystems AG OS8300 Peak25 Oasis SiliconSystems oasis silicon systems
Contextual Info: SPF MIT3 02 SPF MIT3 02 Plastic Fiber Optic Transmitter including Bigfoot IC for MOST Preliminary Data Sheet Safety Hints: Applications of new chip technologies leads to increasing optical efficiency and growing and higher levels of optical performance. We therefore recommend that the current versions of the

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70320

Abstract: SUM70N06-11
Contextual Info: SPICE Device Model SUM70N06-11 Vishay Siliconix N-Channel 60-V D-S , 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

72051

Contextual Info: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch

Contextual Info: — THIS &RÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ — !- BY TYCO ELECTRONICS CORPORATION. L0C G AU " RIGHT5 RESERVED. DIST REVISIONS 50 p LTF

Contextual Info: 1UI5 BRÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ BY TYCO ELECTRONICS CORPORATION. — !- LOC G AU" RIGHT5 RESERVED. D IST REVISIO NS

S-22098

Contextual Info: Si4462DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 1.50 0.510 @ VGS = 6.0 V 1.45 APPLICATIONS D Primary Side Switch

1526223-2

Contextual Info: — THIS &RÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ — !- BY TYCO ELECTRONICS CORPORATION. L0C G AU " RIGHT5 RESERVED. DIST REVISIONS 50 p LTF

RM-065

Abstract: RM0652 plc push button
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR c D RED MOLDED ARROW, DESCRIPTION DATE REV PER EC 0G3C-145-03 DWN APVD MB MZ 16APR03 D RAISED 040.00 035.00

Si7464DP

Contextual Info: Si7464DP New Product Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.24 @ VGS = 10 V 2.8 0.26 @ VGS = 6 V 2.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile

Si4464DY

Abstract: 720-51 72051
Contextual Info: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch

Contextual Info: Si7464DP New Product Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.24 @ VGS = 10 V 2.8 0.26 @ VGS = 6 V 2.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile

Si4462DY

Contextual Info: Si4462DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 1.50 0.510 @ VGS = 6.0 V 1.45 APPLICATIONS D Primary Side Switch

FTS512K4

Abstract: HCS12 ff092
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS512K4V1/D Freescale Semiconductor, Inc. FTS512K4 Block User Guide V01.06 Original Release Date: 08 FEB 2001 Revised: 01 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

Contextual Info: 1HI5 BRAWINÖ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN-~ BY TYCO ELECTRONICS CORPORATION. AU" — !- LOC G RIGHT5 RESERVED. D IST REVISIO NS 50 p LTH A DESCRIPTION