024BIT Search Results
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024BIT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1026BContextual Info: DS2502 DALLAS SEMICONDUCTOR FEATURES DS2502 1 kbit Add-Only Memory PIN ASSIGNMENT TO -92 • 1024 bits Electrically Programmable Read Only M emory EPROM communicates with the economy of one signal plus ground NC Q L 1 8 ID NC NCQE 2 7 ID NC n r 3 6 ID NC |
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DS2502 1026B | |
Contextual Info: M ITSUBISHI LSIs M5M44400AWJ,J,L,TP, RT-6,-7,-8, -6L, -7L, -8L FAST PAGE MODE 4194304-BIT 1048576-W0RD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fam ily of 1048576-word by 4-bit dynam ic R A M S , PIN CONFIGURATION (TOP VIEW) fabricated with the high performance C M O S process, and |
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M5M44400AW 4194304-BIT 1048576-W0RD 1048576-word 26-pin | |
MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
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360746lat MM4220DF/MM5220DF mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061 | |
XL93LC46Contextual Info: ROHn CORP/ EXEL NELECS k lfr / bbE J> m 702^014 0001b2fl 7ÔG «REFI MICROELECTRONICS XL93LC46 ExcellenceIn & 1,024-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES PIN CONFIGURATIONS • State-of-the-Art Architecture — Nonvolatile data storage |
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0001b2fl XL93LC46 024-Bit XL93LC46 | |
Contextual Info: - PR ELIM IN A R Y - February 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V4405C-60/-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMO S 1,048,576 x 4 bit Hyper Page M ode Dynamic RAM The Fujitsu M B81V4405C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304 |
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V4405C-60/-70 B81V4405C 024-bits | |
C46A
Abstract: c46a1 NM93C46N NM93C46M8 C1996 M08A MTC08 NM93C46 NM93C46A nm93c46am8
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NM93C46 024-Bit 16-bit NM93C46) NM93C46A) NM93C46 C46A c46a1 NM93C46N NM93C46M8 C1996 M08A MTC08 NM93C46A nm93c46am8 | |
SN7401
Abstract: sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c
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24-lead SN74S474 SN54S475 SN74S475 SN54S482 SN74S482 LCC4270 SN54490 SN74490 SN54LS490 SN7401 sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c | |
DS2501 transistor
Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
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DS1802 DS2501 transistor WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK | |
Contextual Info: B IP O L A R M E M O R Y D IV IS IO N JA N U A R Y 198 3 1024-BIT ECL RAM 1024 x 1 1 0 0 4 1 5 /1 0 0 4 1 5 A /1 0 0 4 1 5B DESCRIPTION The 100415 device is a 1024-word by 1-bit, fu lly encoded ECL R ead/W rite Random A ccess M em ory designed fo r hig h speed |
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1024-BIT 1024x1) 100415/100415A/100415B 1024-word 00415A: 100415B: | |
un1211Contextual Info: VITESSE S E M I CONDU CT OR 03* • D A T A S H E E T VS12G422T Gallium Arsenide 256 x 4 Static RAM SEMICONDUCTOR CORPORATION Distinctive Features • • Com m ercial and military tem perature ra n g e . 2 5 6 words by 4-bit static R A M for caché and control store |
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VS12G422T 22-pin 28-pin 024-bit un1211 | |
pd3573
Abstract: PD799D photocell light FR-T1 Sensor
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uPD3573 2048-BIT 048-bit 024-bit PD799D) T-41-55 b42752S QQ30772 G030773 pd3573 PD799D photocell light FR-T1 Sensor | |
Contextual Info: - PRELIMINARY - March 1995 Edition 3.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 6 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400A is a fully decoded CM OS Dynamic RAM DRAM that contains |
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MB8116400A B8116400A | |
PD35H73
Abstract: uPD35H73 dock 2048 x 1 ccd linear array tgh 5 C500 1010TU
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uPD35H73 2048-bit 048-bit 024-bit PD35H73 L427S25 PD35H73 dock 2048 x 1 ccd linear array tgh 5 C500 1010TU | |
NM93C46AM8
Abstract: C1996 M08A MTC08 NM93C46A NM93C46AEN NM93C46AMT8 NM93C46AN
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NM93C46A 024-Bit NM93C46A 16-bit NM93C4or NM93C46AM8 C1996 M08A MTC08 NM93C46AEN NM93C46AMT8 NM93C46AN | |
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
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DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 | |
upd3575d
Abstract: 74HC163
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uPD3575D 024-bit 74HC163 mS75ES jiPD4011B iPD40138 1PD4013B 0G307T3 T-41-55 74HC163 | |
ARM core LC 2148
Abstract: 87ch20 7812 a 5Dx diode
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TMP87CC20/H20/K20A/M20A TMP87CC20F, TMP87CH20F, TMP87CK20AF, TMP87CM20AF 87CC20/H20/K20A/M20A TMP87CC20F TMP87CH20F TMP87CK20AF TMP87CM20AF ARM core LC 2148 87ch20 7812 a 5Dx diode | |
Contextual Info: MITSUBISHI LSIs M5M44400AWJ,J,L,TP,RT-6,-7,-8,-10 FAST PAGE MODE 4194304-BIT 1048576-W 0RD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAM S, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high |
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M5M44400AWJ 4194304-BIT 048576-W 1048576-word 44400ATP, 26-pin | |
7400A
Abstract: B8-11
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MB8117400A B8117400A P-DRAM-DS-20099-11/95 7400A B8-11 | |
Contextual Info: E&L Preliminary Information XL93LL46 1 ,024-Bit Serial Electrically Erasable P R O M FEATURES PIN CONFIGURATIONS • 1.8V to 5.5 V Operation Plastic Dual-In-line "P” Package ■ Extended Temperature Range: -40°C to +85°C ■ State-of-the-Art Architecture |
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250KHz XL93LL46 |