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Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
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bbS3T31 O220AB BUK452-1OOA/B BUK452 -100A -100B BUK452-100A/B |