01FEB2007 Search Results

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

STA517B

Abstract: VCC1-B30 C82 004 dual diode C101 C109 C110 R104 STA517B13TR vcc1b30
Contextual Info: STA517B 60-V 6-A quad power half bridge Features „ Low input/output pulse width distortion „ 200 mΩ RdsON complementary DMOS output stage „ CMOS-compatible logic inputs „ Thermal protection „ Thermal-warning output „ Undervoltage protection PowerSO36 package

Contextual Info: STA516B 65 V, 7.5 A quad power half bridge Datasheet - production data Description STA516B is a monolithic quad half-bridge stage in multipower BCD technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single

Contextual Info: STA516B 65 V, 7.5 A quad power half bridge Datasheet - production data Description STA516B is a monolithic quad half-bridge stage in multipower BCD technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single

17NF25

Abstract: 17NF2 STI17NF25 STP17NF25 STD17NF25 STF17NF25 st 393 JESD97 17nf25 data
Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

MARKING code mx stmicroelectronics

Abstract: EMIF04-1005M8 EMIF04-1502M8 JESD97
Contextual Info: EMIF04-1005M8 IPAD 4 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 8 Where EMI filtering in ESD sensitive equipment is required: 7 1 G ND 2 GND • LCD & CAMERA for Mobile phones 6 3 ■ Computers and printers

17NF25

Abstract: 17NF2 17nf25 data 17nF DSA0067465 STD17NF25 STI17NF25 STF17NF25 STP17NF25
Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

17NF2

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

Contextual Info: EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI asymmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering 7 ■ Very low PCB space consumption: 1.7 mm x 1.5 mm 6 3 5 4 ■ Very thin package: 0.6 mm max

STA516B

Abstract: ST50X STA50X C101 C109 C110 R104 STA516B13TR ma706
Contextual Info: STA516B 60 V 6 A quad power half bridge Features • Minimum input output pulse width distortion ■ 200 mΩ RdsON complementary DMOS output stage ■ CMOS compatible logic inputs ■ Thermal protection ■ Thermal warning output ■ Under voltage protection

LQFP80

Abstract: w32x6 PM0020 ARM966E-S LQFP128 M44X6 lqfp 12X12 STR9 flash programming W44X6 ARM7 MICROCONTROLLER induction motor speed control
Contextual Info: STR91xF ARM966E-S 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA • 16/32-bit 96 MHz ARM9E based MCU – ARM966E-S RISC core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories SRAM and Flash – STR91xF implementation of core adds highspeed burst Flash memory interface,

EMIF04-1005M8

Contextual Info: EMIF04-1005M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI symmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz 7 ■ Very low PCB space consumption:

Contextual Info: ESDA6V1M6, ESDA6V1-5M6 4- and 5-line Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDA6V1M6 ■ 5 unidirectional Transil diodes (ESDA6V1-5M6)

N3NF06

Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description

STA516B

Abstract: STA30X 2.1 to 5.1 home theatre circuit diagram
Contextual Info: STA516B 65-volt, 7.5-amp, quad power half bridge Features ! Low input/output pulse-width distortion ! 200 mΩ RdsON complementary DMOS output stage ! CMOS-compatible logic inputs ! Thermal protection ! Thermal warning output ! Undervoltage protection PowerSO36 package

Contextual Info: EMIF04-1005M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI symmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz 7 ■ Very thin package: 0.6 mm max

JESD97

Abstract: qfn 44 PACKAGE footprint
Contextual Info: ESDALC6V1M6, ESDALC6V1-5M6 4- and 5-line low capacitance Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDALC6V1M6 ■ 5 unidirectional Transil diodes

Power MOSFET SOT-223

Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

EMIF04-1502M8

Abstract: JESD97
Contextual Info: EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI asymmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering 7 ■ Very low PCB space consumption: 1.7 mm x 1.5 mm 6 3 5 4 ■ Very thin package: 0.6 mm max

STA517B

Abstract: AN1994 STA517 VCC1 C101 C109 C110 R104 STA517B13TR diode c83 004
Contextual Info: STA517B 60-V 6.5-A quad power half bridge Features „ Low input/output pulse width distortion „ 200 mΩ RdsON complementary DMOS output stage „ CMOS-compatible logic inputs „ Thermal protection „ Thermal warning output „ Undervoltage protection PowerSO36 package

5n20v

Abstract: st mosfet 5n20v Part Marking STMicroelectronics TSSOP8 JESD97 STC5NF20V
Contextual Info: STC5NF20V N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS on ID STC5NF20V 20V < 0.040 Ω (@ 4.5 V) < 0.045 Ω (@ 2.7 V) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface

C82 004 dual diode

Contextual Info: STA517B 60-V 6.5-A quad power half bridge Features „ Low input/output pulse width distortion „ 200 mΩ RdsON complementary DMOS output stage „ CMOS-compatible logic inputs „ Thermal protection „ Thermal warning output „ Undervoltage protection s

Contextual Info: M65KG512AA 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266 Mbit/s (max)

w32x6

Abstract: M44X6 STR9 flash programming STR912FW44X ARM966E-S LQFP128 LQFP80 str91xfw STR912FW42X PM0020
Contextual Info: STR91xF ARM966E-S 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA • 16/32-bit 96 MHz ARM9E based MCU – ARM966E-S RISC core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories SRAM and Flash – STR91xF implementation of core adds highspeed burst Flash memory interface,