01AUG2002 Search Results

stl431c

Abstract: 3-Terminal adjustable regulator STL431 shunt regulator sot-89
Contextual Info: STL431 3-Terminal Elektronische Bauelemente Adjustable Shunt Regulator SOT-89 Description The STL431 series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between

Contextual Info: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■

Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

Contextual Info: M40SZ100Y M40SZ100W 5 V or 3 V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5 V or 3 V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance

MJD122

Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

KDS 32kHZ crystal

Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

rjg2-7g05

Abstract: 1-1610005-1 IEC60825-1 MAG45 1610005 MAG45 rj45 D3A marking code diode diode marking code RJ
Contextual Info: 7 6 5 4 3 2 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC AA 22 ECHANICAL: - RJG2-7G05 YYWW ORIGIN T LTR DESCRIPTION G DATE DWN RG PD 12SEPT05 REV PER ECO—0 5 —0 0 6 5 7 3 APVD

AN1012

Abstract: M41ST84W block diagram of energy saving ABE smd
Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage

Contextual Info: M40SZ100W 3 V NVRAM supervisor for LPSRAM Datasheet - production data Description The M40SZ100W NVRAM controller is a selfcontained device which converts a standard lowpower SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance

ADQ15-0

Abstract: CMOS linear array M58MR016C M58MR016D TFBGA48
Contextual Info: M58MR016C M58MR016D 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■

13May

Abstract: M40SZ100W M40SZ100Y M4Z28-BR00SH M4Z32-BR00SH SOH28 SOIC16 SOIC28
Contextual Info: M40SZ100Y M40SZ100W 5 V or 3 V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5 V or 3 V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance

88da

Abstract: M58MR032C M58MR032D TFBGA48 ADQ11
Contextual Info: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■

Contextual Info: MJD122 MJD127 Complementary power Darlington transistors Features • Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications 3 ■ General purpose linear and switching 1 Description DPAK The devices are manufactured in planar

M40SZ100W

Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
Contextual Info: M40SZ100Y M40SZ100W 5V or 3V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5V or 3V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance