01AUG14 Search Results

Contextual Info: F-214 Rev 01AUG14 TCSD TMM .26" (6,6 mm) TCSD–08–D–02.00–01–N–R ••••••••••••••••••• (2,00 mm) .0787" TCSD SERIES ™ TIGER EYE IDC SOCKET CABLE Mates with: TMM, TMMH, STMM, MMT, TW, MTMM, EHT, ETMM (-SR), ZSTMM

Contextual Info: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature

Contextual Info: TSUS4400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18°

Contextual Info: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock

Contextual Info: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power

94119

Contextual Info: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA

Contextual Info: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature

Contextual Info: VS-10MQ060NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term

Contextual Info: UGE5HT, UGE5JT www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES • Power pack TO-220AC • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency

Contextual Info: VSLB3948 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • High speed • High radiant power • Low forward voltage

Contextual Info: VS-10MQ040NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term

Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Contextual Info: VSLY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 850 nm • High speed