01APRI Search Results
01APRI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SOD JEDECContextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter |
OCR Scan |
BAS85 50mmx50mmx1 01-Apr-99 BAS85_ -April-99 SOD JEDEC | |
Contextual Info: BAQ333.BAQ 335 Vishay Telefun ken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SO D 323 / S O T 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current devices |
OCR Scan |
BAQ333. BAQ33. BAQ35 BAQ133. BAQ135 BAQ333 BAQ334 BAQ335 01-Apr-99 | |
FR201
Abstract: FR207
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FR201 FR207 DO-15 MIL-STD-202, 01-April-2009 FR201 FR207 | |
FR201G
Abstract: FR207G
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FR201G FR207G DO-15 MIL-STD-202, 01-April-2009 FR201G FR207G | |
SF11G
Abstract: SF12G SF13G SF14G SF15G
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SF11G SF15G DO-41 MIL-STD-202, 01-April-2009 SF11G SF12G SF13G SF14G SF15G | |
Contextual Info: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms |
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TSH511 11MHz TQFP44 | |
2SB764L
Abstract: 2SB764
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2SB764L O-92L 01-April-2009 2SB764L 2SB764 | |
FR301
Abstract: FR307
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FR301 FR307 DO-27 MIL-STD-202, 01-April-2009 FR301 FR307 | |
Contextual Info: BAS81 .BAS83 VISM ÄY ▼ Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static d is charge • Low capacitance • Low leakage current • Low forw ard voltage drop • Very low sw itching tim e Applications |
OCR Scan |
BAS81 BAS83 BAS81 BAS82 BAS83 D-74025 01-April-99 | |
BAS85Contextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 94 9371 Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter |
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BAS85 50mmx50mmx1 D-74025 01-April-99 BAS85 | |
"Logarithmic Amplifiers"
Abstract: BAQ33 BAQ133 BAQ135 BAQ333 BAQ334 BAQ335 BAQ35
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BAQ333. BAQ335 BAQ33. BAQ35 BAQ133. BAQ135 BAQ333 BAQ334 D-74025 "Logarithmic Amplifiers" BAQ33 BAQ133 BAQ135 BAQ333 BAQ334 BAQ335 | |
HER101
Abstract: Er107 ER10 HER107
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HER101 HER107 DO-41 MIL-STD-202, 01-April-2009 HER101 Er107 ER10 HER107 | |
Contextual Info: BAS81—BAS83 VISN A Y Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static dis charge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time Applications 94 9371 HF-Detector |
OCR Scan |
BAS81â BAS83 BAS81 BAS82 01-April-99 01-Apr-99 | |
SCS202NF
Abstract: Small Signal Switching "MARKING CODE N"
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SCS202NF OT-323 100ns 01-April-2009 SCS202NF Small Signal Switching "MARKING CODE N" | |
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CW252016Contextual Info: MATERIAL DECLARATION SHEET Material Number CW252016 Series Product Line Wirewound Chip Inductor Compliance Date 01-April-2008 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Material weight [mg] 1 Ferrite Ni-Zn Series 2 Metallizing |
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CW252016 01-April-2008 | |
Contextual Info: SSG4800 N-ch Enhancement Mode Power MOSFET 9.4 A, 30 V, RDS ON 17 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z z z z z The SSG4800 provides the designer with the best combination of fast switching, ruggedized |
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SSG4800 SSG4800 07936g 01-April-2009 | |
audio limiter schematics
Abstract: FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator
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TSH511 11MHz TQFP44 audio limiter schematics FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator | |
Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance |
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BD239C BD240C. O-220 | |
2.3MHz 2.8MHz
Abstract: hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver
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TSH511 11MHz TQFP44 2.3MHz 2.8MHz hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver | |
SF21
Abstract: SF22 SF23 SF24 SF25 2SF21
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DO-15 MIL-STD-202, 01-April-2009 SF21 SF22 SF23 SF24 SF25 2SF21 | |
SF35G
Abstract: SF31G SF32G SF33G SF34G
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SF31G SF35G DO-27 MIL-STD-202, 01-April-2009 SF35G SF31G SF32G SF33G SF34G | |
Contextual Info: 2 3 1 0 rI o a tu œ r z MAX 0 . 5 1 9 * 7 z o o œ h - UJ Z mm ^ . » # A - . ¥ * * _ jr ^ A - SECT B SECT SECT 1 . Î K Æ » ii3 .jy i.tfr : 108-5-4 10 B H R - M - Ä ffl« . « “ : 1 1 4 -5 1 7 5 a 2 . JR £& K W « : 411-5638 1 .APPLICABLE S PEC |
OCR Scan |
01APRI | |
Contextual Info: 2SA1160 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W Tamb=25℃ ● Collector current ICM: -2 A ● Collector-base voltage V(BR)CBO: -20 V |
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2SA1160 O-92L -50mA 01-April-2009 | |
FR301G
Abstract: FR307G
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FR301G FR307G DO-27 MIL-STD-202, 01-April-2009 FR301G FR307G |