01APRI Search Results
01APRI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SOD JEDECContextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter |
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bas8550mmx50mmx101-apr-99bas85_+2 | |
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Contextual Info: BAQ333.BAQ 335 Vishay Telefun ken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SO D 323 / S O T 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current devices |
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baq333baq33baq35baq133+4 | |
FR201
Abstract: FR207
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fr201fr207do-15mil-std-202+1 | |
FR201G
Abstract: FR207G
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fr201gfr207gdo-15mil-std-202+1 | |
SF11G
Abstract: SF12G SF13G SF14G SF15G
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sf11gsf15gdo-41mil-std-202+4 | |
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Contextual Info: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms |
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tsh51111mhztqfp44 | |
2SB764L
Abstract: 2SB764
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2sb764lo-92l01-april-20092sb764 | |
FR301
Abstract: FR307
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fr301fr307do-27mil-std-202+1 | |
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Contextual Info: BAS81 .BAS83 VISM ÄY ▼ Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static d is charge • Low capacitance • Low leakage current • Low forw ard voltage drop • Very low sw itching tim e Applications |
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bas81bas83bas82d-74025+1 | |
BAS85Contextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 94 9371 Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter |
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bas8550mmx50mmx1d-7402501-april-99 | |
"Logarithmic Amplifiers"
Abstract: BAQ33 BAQ133 BAQ135 BAQ333 BAQ334 BAQ335 BAQ35
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baq333baq335baq33baq35+5 | |
HER101
Abstract: Er107 ER10 HER107
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her101her107do-41mil-std-202+3 | |
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Contextual Info: BAS81—BAS83 VISN A Y Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static dis charge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time Applications 94 9371 HF-Detector |
OCR Scan |
bas81bas83bas8201-april-99+1 | |
SCS202NF
Abstract: Small Signal Switching "MARKING CODE N"
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scs202nfot-323100ns01-april-2009+2 | |
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CW252016Contextual Info: MATERIAL DECLARATION SHEET Material Number CW252016 Series Product Line Wirewound Chip Inductor Compliance Date 01-April-2008 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Material weight [mg] 1 Ferrite Ni-Zn Series 2 Metallizing |
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cw25201601-april-2008 | |
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Contextual Info: SSG4800 N-ch Enhancement Mode Power MOSFET 9.4 A, 30 V, RDS ON 17 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z z z z z The SSG4800 provides the designer with the best combination of fast switching, ruggedized |
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ssg480007936g01-april-2009 | |
audio limiter schematics
Abstract: FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator
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tsh51111mhztqfp44audio limiter schematics+9 | |
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Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance |
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bd239cbd240co-220 | |
2.3MHz 2.8MHz
Abstract: hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver
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tsh51111mhztqfp442.3mhz 2.8mhz+7 | |
SF21
Abstract: SF22 SF23 SF24 SF25 2SF21
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do-15mil-std-20201-april-2009sf21+5 | |
SF35G
Abstract: SF31G SF32G SF33G SF34G
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sf31gsf35gdo-27mil-std-202+4 | |
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Contextual Info: 2 3 1 0 rI o a tu œ r z MAX 0 . 5 1 9 * 7 z o o œ h - UJ Z mm ^ . » # A - . ¥ * * _ jr ^ A - SECT B SECT SECT 1 . Î K Æ » ii3 .jy i.tfr : 108-5-4 10 B H R - M - Ä ffl« . « “ : 1 1 4 -5 1 7 5 a 2 . JR £& K W « : 411-5638 1 .APPLICABLE S PEC |
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01apri | |
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Contextual Info: 2SA1160 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W Tamb=25℃ ● Collector current ICM: -2 A ● Collector-base voltage V(BR)CBO: -20 V |
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2sa1160o-92l-50ma01-april-2009 | |
FR301G
Abstract: FR307G
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fr301gfr307gdo-27mil-std-202+1 | |