01APR99 Search Results

s 8550 d

Abstract: telefunken ra 100 SCT23
Contextual Info: DZ23C2V7-DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features • SO T-23 surface mount package • 300 mW power dissipation rating • Ideally suited for automatic insertion • AVz for both diodes in one case is < 5% • Common anode style available see AZ series

SOD JEDEC

Contextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter

Contextual Info: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C

bc815

Abstract: BC815-25 9600 baud rate converter
Contextual Info: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for

IR5H

Abstract: diode ir01
Contextual Info: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic

Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications

Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: _ BB804 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios Absolute Maximum Ratings

BA979

Contextual Info: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current

Contextual Info: BAQ333.BAQ 335 Vishay Telefun ken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SO D 323 / S O T 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current devices

1009C

Contextual Info: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: 1N4151_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current

telefunken ta 350

Abstract: vishay AX
Contextual Info: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

Contextual Info: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings

Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings

Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage

FZIT

Contextual Info: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization

TZX18B

Abstract: TZX 16 C
Contextual Info: TZX._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications Voltage stabilization

Contextual Info: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings

BZX85

Contextual Info: _BZX85CVishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Sharp edge in reverse characteristics • Low reverse current • Low noise • Very high stability • Available with tighter tolerances Applications

diode ep sod-323

Abstract: 1N4148 SOD-323 A
Contextual Info: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package

LL4150

Contextual Info: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C

1N4683 data

Abstract: Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685
Contextual Info: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Absolute Maximum Ratings