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    019N06L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB019N06L3GATMA1

    Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB019N06L3GATMA1 4,563 1
    • 1 -
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    • 100 $1.69
    • 1000 $1.51
    • 10000 $1.42
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    TME IPB019N06L3GATMA1 414 1
    • 1 $2.40
    • 10 $2.03
    • 100 $1.47
    • 1000 $1.29
    • 10000 $1.29
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    019N06L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    019N06L

    Abstract: 019n IEC61249-2-21 IPB019N06L3 JESD22
    Contextual Info: 019N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 1.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb019n06l3iec61249-2-21pg-to-263-3019n06l+2019njesd22 PDF

    019N06L

    Abstract: IPB019N06L3 G IPB019N06L3 JESD22
    Contextual Info: 019N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 1.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb019n06l3pg-to-263-3019n06lipb019n06l3 g+1jesd22 PDF