016REF Search Results

c3072

Abstract: line filter 6.8mH C307-2
Contextual Info: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]

C3058

Contextual Info: C3058 REV D Product Description 1.4mH, 1.333:1 TR Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3058 XXXXX [9.91 MAX] 0.390 MAX 0.40 .016REF 1 8

XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Sirenza amplifier SOT-89 Marking

Abstract: .XA2
Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Xa2 TRANSISTOR

Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Xa2 TRANSISTOR

Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Contextual Info: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

SXT-289

Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

marking 25 mmic sot-89

Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

ic 14040

Abstract: 14040
Contextual Info: C2684 REV Product Description E 1.15:1, 474µH CEP7 Line Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C2684 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface

C300-2

Abstract: 15364
Contextual Info: C3002 REV Product Description E Globespan CO ADSL over POTS 1.41:1 Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3002 XXXXX [9.91 MAX] 0.390 MAX

Contextual Info: C2937L REV Product Description B 1.39:1 TR, 100µH CEP7 Line Interface Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code COEV C2937L XXXXX [9.91 MAX] 0.390 MAX

Xa3 TRANSISTOR

Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

xa3b

Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

XA2 MMIC

Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM

Contextual Info: C3082L REV A Product Description CEP7 0.83:1 ADSL DMT CO Line Transformer Meets requirements of IEC60950 for basic insulation, 250V working voltage Customer Terminal #1 Indicator EIA date code and lot code A COEV C3082L XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface

marking xt2 mmic

Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Contextual Info: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

267M3502104K

Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

Xa3 TRANSISTOR

Abstract: matsuo
Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

RF AMP marking c7 sot-89

Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

C3200L

Abstract: CEP7
Contextual Info: C3200L Product Description REV B Texas Instruments AC6 Line Isolation Transformer 1.9:1 CEP7 Meets requirements of IEC60950 for supplementary insulation, 250V working voltage A Customer Terminal #1 Indicator COEV C3200L XXXXX [9.91 MAX] 0.390 MAX Coplanar with