DMT10H010L
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Shenzhen Heketai Electronics Co Ltd
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N-channel high voltage MOSFET with 100V drain-source voltage, 29.5A continuous drain current at TC=25C, ultralow on-resistance of 8.0mOhm typical at VGS=10V, and fast switching speed in SOP-8 surface mount package. |
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CESD2010LC2V5B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC2V5B, designed for high-speed data line protection with 2.5V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 10A peak pulse current handling. |
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RR5025(2010)L0R82FT
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SUP
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Thick Film Chip Resistor with standard tolerances of ±5%, ±1%, and ±0.5%, available in sizes from 01005 to 2512, featuring resistance ranges from 1Ω to 100MΩ and TCR values down to ±300 ppm/°C. |
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CESD2010LC3V3BH
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC3V3BH, designed for high-speed data lines with 3.3V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 100W peak pulse power rating. |
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CESD2010LC2V8B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC2V8B, designed for high-speed data line protection with 2.8V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 10A peak pulse current handling. |
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RR5025(2010)LR010FT
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SUP
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Thick Film Chip Resistor (RR) in sizes from 01005 to 2512, with power ratings up to 3W, operating voltage up to 500V, resistance range from 0Ω to 100MΩ, and TCR down to ±50 PPM/°C.Thick Film Chip Resistor (RR) in sizes from 01005 to 2512, with power ratings up to 3W, operating voltage up to 500V, resistance range from 0Ω to 100MΩ, and TCR down to ±50PPM/℃. |
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CESD2010LC3V3B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC3V3B, features 0.8 pF typical I/O to I/O capacitance, 3.3 V reverse stand-off voltage, and 200 W peak pulse power for high-speed data line protection. |
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DMT10H010L
