00Q73 Search Results

a12t

Abstract: transistor a12t 2SA1589 2SC4120 k 2059 TRANSISTOR Ge 2sa la 1001 sanyo PHP I 2SA15 PNP 2SA15
Contextual Info: SANYO SEMICONDUCTOR CORP SHE D 7Ti7Q7b 2SA1589, 2SC4120 00Q73SH 3 T -3 7 -/3 ~T-35-U P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=22ki2 <§¡2036 Applications . Switching circuit, in terfa ce c ir c u it , driver c ir c u it

2N4400

Abstract: MPS3705 ic hp samsung transistor D 586
Contextual Info: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D | 7 ^ 4 1 4 5 00Q731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: MP7616 15 V C M O S 16-Bit Multiplying Digital-to-Analog Converter Z'EXflR FEATURES • • • • • Monolithic CMOS Construction Full Four-Quadrant Multiplication Excellent Stability Over Temperature and Time TTL/5 V CMOS Compatible Guaranteed Monotonie

Contextual Info: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)

BUT1A

Abstract: MP7628JN MP7529B MP7628 MP7628AD MP7628BD MP7628JP MP7628JS MP7628KN MP7628KP
Contextual Info: MP7628 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter T J W Æ B T Æ B rÆ B FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies

ATS35

Contextual Info: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to

Contextual Info: MP7641 8-Channel Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Port FEATURES • DACs Matched to ±0.5% typ • Chip Select Available: MP7651 • Low Harmonic Distortion: 0.25% typical with V r e f = 1 V p-p @ 1 MHz • VREF/2 Output Preset Level

Contextual Info: P r e l im in a r y In f o r m a t io n D a ta S h e e t PMC-960840 PM I P M C -S ierra, Inc. •/ P M 4388TO C TL ISSUE 3 OCTAL T1 FRAMER FEATURES • Integrates eight T1 framers in a single device for terminating duplex DS-1 signals. • Supports SF and ESF format DS-1 signals.

Contextual Info: BROOKTREE CORP b3E T> 1L45S^5 □ 0 0 7 3 7 e! SD1 • BRK 40 R8070 eo ° R8070 T1/CEPT PCM Transceiver INTRODUCTION FEATURES The Rockwell R8070 T1/CEPT PCM Transceiver is a monolithic silicon gate CMOS device designed to implement PCM trans­ mitter and receiver functions applied in primaiy-rate digital carrier

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7408200B S/SG is an 8M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 4M x 4 bit DRAMs in 24 26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

transistor

Contextual Info: SAMSUNG SEMICONDUCTOR IM E O INC MPS29Ö7 7^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '• " ' > * T -29 -21 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw=40V • Collector Dissipation: Pc (max >825mW

Avantek amplifier

Abstract: transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331
Contextual Info: AVANTEK INC EOE O a v a n tek D • i m i l t t 0QQ7343 Selection G uide 4 GPD Series PRODUCT DESCRIPTION The GPD and G PM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are designed for applications which require the highest performance-to-cost ratio or where size is

transistor 2Fn

Abstract: PNP pN2907 MPS2907 transistor PN2907 PN2907
Contextual Info: SAMSUNG SEMICONDUCTOR me INC MPS29Ö7 D • 7*^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '■ " ' > * T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw =40V • Collector Dissipation: Pc (max >825mW

MPS3702

Abstract: 583 transistor
Contextual Info: SAMSUNG SEMI C ONDU CT OR INC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)