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00B5777 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC3140 Abstract: L0801 Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis tors is designed fo r linear operation in the 500 to 1000 MHz	OCR Scan	l0801 nel0802 nel0805 nel080120-28 +5nel080220-28 nel080525-28 el0800 d-179 2sc3140	PDF
A11RC Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	tc5116160aj/aft-60/70/80 tc5116160aj/aft 00b5777 0d2577 +4tc51161610aj/aft-60/70/80 0q25771 tc5116160a a11rc	PDF

Catalog Datasheet

Type

Document Tags

PDF

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis tors is designed fo r linear operation in the 500 to 1000 MHz

OCR Scan

l0801 nel0802 nel0805 nel080120-28 +5

PDF

A11RC

Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

OCR Scan

tc5116160aj/aft-60/70/80 tc5116160aj/aft 00b5777 0d2577 +4

PDF