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00B4173 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LD18 SOT223 Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.	OCR Scan	7110flst odb417d buk482-100a ot223 +8711002b 0db4174 35\im ld18 sot223 transistor wmv 5e sot223 ij63 ld18a	PDF
RS-495 Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4.75 M-BIT FIELD RAM 270-ROW x 288-COLUMN x 8-BLOCK x 8-BIT D e scrip tio n The juPD487000GC is a random block access, serial read and write Field RAM. The 270-row and 288-column non multiplexed address inputs selects an 8-byte block. The random access time to the 8-byte block is 200 ns. This device	OCR Scan	270-row 288-column upd487000gc p100gc-50-7ea-2 +5b427525 00b4173 upd487000 /ipd487000 rs-495	PDF

Catalog Datasheet

Type

Document Tags

PDF

LD18 SOT223

Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

OCR Scan

7110flst odb417d buk482-100a ot223 +8

PDF

RS-495

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4.75 M-BIT FIELD RAM 270-ROW x 288-COLUMN x 8-BLOCK x 8-BIT D e scrip tio n The juPD487000GC is a random block access, serial read and write Field RAM. The 270-row and 288-column non multiplexed address inputs selects an 8-byte block. The random access time to the 8-byte block is 200 ns. This device

OCR Scan

270-row 288-column upd487000gc p100gc-50-7ea-2 +5

PDF