007430D Search Results

transistor BG 23

Abstract: BF966S
Contextual Info: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,