AK2007N
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK2007N with 20V VDS, 6.5A ID, RDS(ON) less than 27mΩ at VGS=2.5V, suitable for battery protection and switching applications in SOT23-6L surface mount package. |
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3DD13007N36F
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JCET Group
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NPN transistor in TO-220F package, rated for 400V collector-emitter voltage, 8A continuous collector current, with a DC current gain of 10 to 40 and collector power dissipation of 2W. |
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VSD007N04MS-G
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VANGUARD
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40V/90A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.6 mOhm at VGS=10V, TO-252 package, designed for high efficiency and fast switching applications. |
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3DD13007N36
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JCET Group
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NPN transistor in TO-220-3L package, rated for 400V collector-emitter voltage, 8A continuous collector current, 2W power dissipation, with a DC current gain (hFE) from 10 to 40 and transition frequency of 4MHz. |
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VSA007N02KD
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VANGUARD
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20V/13A dual N-channel common-drain advanced power MOSFET with 7.4 mΩ typical RDS(on) at VGS=4.5V, available in TDFN2x3-6L package, suitable for 2.5V logic level control and high-efficiency power management applications. |
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VSO007N04MS-G
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VANGUARD
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40V/22A N-Channel Advanced Power MOSFET with RDSon 3.7 mΩ at VGS=10V, SOP8 package, suitable for high-efficiency switching applications. |
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VSP007N04MS-G
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VANGUARD
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40V, 80A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.4 mOhm at VGS=10V and 5.1 mOhm at VGS=4.5V, available in PDFN5x6 package. |
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VSE007N04MS-G
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VANGUARD
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40V/75A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.2 mOhm at VGS=10V and 4.9 mOhm at VGS=4.5V, available in PDFN3333 package. |
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AK2007N
