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Contextual Info: bbS3^31 00547S3 111 « A P X N AMER PHILIPS/DISCRETE BF997 b7E ]> SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S 0T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television |
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00547S3 BF997 0T143 |