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005A
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Essentra Components
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TAPERED CAP - OD RANGE: 6.1 - 7. |
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AK6005AR
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AK Semiconductor
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AK6005AR N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 5A continuous drain current, RDS(ON) less than 35mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
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AK6005AN
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK6005AN with 60V drain-source voltage, 5A continuous drain current, RDS(ON) less than 35mΩ at VGS=10V, and low gate charge for high-efficiency switching applications. |
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JMTC3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A, 5.0mΩ N-channel Power Trench MOSFET in TO-220-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMTG3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.7mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and available in PDFN5x6-8L package. |
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SM4005A
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SUNMATE electronic Co., LTD
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Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0A average forward current, 50 to 1000V recurrent peak reverse voltage, low forward voltage drop, designed for surface mounted applications. |
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JMTK4005A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.9mΩ at VGS=10V, TO-252-3L package, designed for load switching, PWM applications, and power management. |
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JMTK3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 100A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 4.4mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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NCE6005AR
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NCEPOWER
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NCE6005AR is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications. |
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AK6005AS
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 5A continuous drain current, 26mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high-frequency applications. |
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JMTQ3005A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTQ3005A with 30V VDS, 50A ID, RDS(ON) less than 4.8mΩ at VGS = 10V, PDFN3x3-8L package, suitable for load switch and power management applications. |
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JMTI3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and lead-free packaging in TO-251-3L. |
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NCE6005AS
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NCEPOWER
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NCE6005AS is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE6005AN
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NCEPOWER
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NCE6005AN is a 60V, 5A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 26 mΩ at VGS=10V and low gate charge, suitable for high-frequency switching applications. |
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AK6005AR
