004DB45 Search Results

Contextual Info: SSW/I1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on =: 1 2 Q ■ Lower Input Capacitance lD = 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |jA (Max.) @ VDS = 600V