003ST Search Results

Contextual Info: BF964S _ J \_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable for use in professional

Contextual Info: PRELIM INARY COM’L: -7/10/12/15/20 Z I Advanced Micro Devices M A C H 1 3 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 7.5 ns tpo

Contextual Info: FINAL COM’L: -15/20 IND:-18/24 S M A C H 1 2 0 - 1 5 / 2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 56 Inputs ■ 48 Macrocells ■ 48 Outputs ■ 15 ns tpoCommercial 18 ns tpo Industrial

Contextual Info: FINAL COM’L: -12 a MACH210AQ-12 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 2 clock choices ■ 12 ns tPD Commercial ■ 4 “PAL22V16” blocks with buried macrocells

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

Siemens PEB 2040

Abstract: Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • S IE M E N S 623SbDS 0035^31 5 ■ ISIEG -T -7 5 -//' Memory Time Switch CMOS MTSC Preliminary Data PEB 2045 PEF 2045 CMOS 1C Type Ordering Code Package PEB 2045 P PEB 2045 C PEB 2045 N PEF 2045 P PEF 2045 C PEF 2046 N

BF981

Abstract: bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981
Contextual Info: BF981 J v _ _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fietd-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi­

M37702E4AFS

Abstract: M37702E4 AL P3d m37703e4axxxsp M37702M2AXXXFP M37702M2BXXXFP m37702e2 E7702
Contextual Info: ELECTRICAL CHARACTERISTICS 15.1 Absolute maximum ratings_ This chapter describes electrical characteristics of the M 37702M2BXXXFP and M37702M2AXXXFP. For the low voltage version, refer to section “18.4 E le c tric a l c h a ra c te ris tic s .”

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: FINAL COM’L: -10/12/15/20, Q-15/20 IND: -12/14/18/24 M A C H 2 1 0 A -1 0 M A C H 2 1 0 -1 2 /1 5 /2 0 M A C H 2 1 O A Q -1 5 /2 0 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells

bfr84

Abstract: 71672 MSI MS-5 511 MOSFET
Contextual Info: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,

BSV81

Contextual Info: BSV81 J V. N-CHANNEL IG-MOS-FET Symmetrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits, multiplex circuits, etc. The features are a very low drain-source 'on' resistance, a very high drain-source

BSV81

Abstract: rce3 VBD30
Contextual Info: BSV81 J V _ N-CHANNEL IG-MOS-FET Sym m etrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits,

63N003

Abstract: CS JST E172855 250-SERIES PA46 TSSF002 JST 14 UL94V-2 SOM-51
Contextual Info: This Drawing is the property of J.S.T. U.K. Ltd. It must not be copied or used for manufacturing without written permission from J.S.T.(U.K.) Ltd. UNCONTROLLED CUSTOMER ISSUE CS-003STY 01016 003STY 63N003 PA46 PA66 UL94V-2 UL94V-2 Natural Natural JST Part Number

transistor mosfet bf964s

Abstract: BF964SA BF964S 10103F
Contextual Info: BF964S J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable fo r use in professional

SN139

Abstract: 6N1381 6N139 6N138 PHILIP MCB390 MSA8
Contextual Info: Product specification Philip» Semiconductor» Low input current, high-gain optocouplers 6N138/6N139 FEATURES • High current transfer ratio • Short propagation delay times • TTL compatible • Low saturation voltage/low input current • High transient immunity