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1da sot-23

Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
Contextual Info: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

Contextual Info: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize