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Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53T31 DQ3DSbD fiTT * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in |
OCR Scan |
bb53t31ot186k445-200a/bbuk445+5 |