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    IRFR311

    Abstract: U311 IRFR310 irfu310 250M ISE Electronics RE25
    Contextual Info: N-CHANNEL POWER MOSFETS IRFR310/311 IRFU310/311 FEATURES D-PAK • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    IRFR310/311 IRFU310/311 IRFR310/U310 IRFR311/U311 IRFR311 U311 IRFR310 irfu310 250M ISE Electronics RE25 PDF