002E2L Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-15 Features • High power - p 1dB = 42.0 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications Q¡ = 25°C