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Contextual Info: 4ÖBS771 0DEfc.fc.22 37b 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE IDT7M1001 IDT7M1003 FEATURES DESCRIPTION: • High-density 1M /512 K C M O S Dual-Port Static RAM module • Fast access times: — Com mercial 35, 40ns — Military 40, 50ns • Fully asynchronous read/write operation from either port

Contextual Info: TOSHIBA TC518512FIvTl/FII/TOL-70 L'I /8QflJ)/10a3) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

ATF9

Contextual Info: RC288ACLW-GSM, RC144ACLW-GSM, and RC144ACFLW-GSM Modem Designer’s Guide 2. TECHNICAL SPECIFICATIONS 2.1 PARALLEL HOST BUS INTERFACE OPERATION Command Mode and Data Modem Mode. The modem can operate at rates up to 57600 bps RC144 or by programming the Divisor Latch in the parallel interface registers.

Contextual Info: KS57C2202 4-BIT CMOS Microcontroller ELECTRONICS Product Specification PRODUCT OVERVIEW The KS57C2202 single-chip CMOS microcontroller has been designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-16-digit LCD direct drive capability, a melody generator with