002B420 Search Results

002B4

Contextual Info: Si G E C P L E S S E Y PRELIMINARY INFORMATION DS4316 -1.2 I T E 0 8 F 1 2 / I T E 0 8 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The IT E 0 8X 12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IG BT designed for

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.